scholarly journals Liquid-Assisted Vapor–Solid–Solid Silicon Nanowire Growth Mechanism Revealed by In Situ TEM When Using Cu–Sn Bimetallic Catalysts

2021 ◽  
Author(s):  
Éric Ngo ◽  
Weixi Wang ◽  
Pavel Bulkin ◽  
Ileana Florea ◽  
Martin Foldyna ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Bimetallic Catalysts ◽  
Silicon Nanowire ◽  
Nanowire Growth ◽  
In Situ Tem

scholarly journals In-Situ TEM Investigation of Controlled VLS Silicon Nanowire Device Formation and Characterization

2016 ◽  
Vol 22 (S5) ◽  
pp. 60-61
Author(s):  
S.B. Alam ◽  
F. Panciera ◽  
M.M Norton ◽  
O. Hansen ◽  
F.M. Ross ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
In Situ Tem ◽  
Nanowire Device

scholarly journals In Situ TEM Studies of III-V Nanowire Growth Mechanism

2021 ◽  
Author(s):  
Carina B. Maliakkal
Keyword(s):  
Growth Dynamics ◽  
Layer Growth ◽  
Metal Catalyst ◽  
Nanowire Growth ◽  
In Situ Tem ◽  
Semiconductor Nanowire ◽  
Transmission Electron ◽  
The Difference ◽  
Bandgap Semiconductors

Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors. Several compound semiconductors on the other hand have a direct bandgap making them more efficient in several applications involving light absorption or emission. During compound nanowire growth using a metal catalyst, the difference in miscibility of the nanowire species inside the metal catalyst are different, making its growth dynamics different from elemental nanowires. Thus, studies specifically focusing on compound nanowires are necessary for understanding its growth dynamics. This chapter reviews the recent progresses in the understanding of compound semiconductor nanowire growth obtained using in situ TEM. The concentrations of the nanowire species in the catalyst was studied in situ. This concentration difference has been shown to enable independent control of layer nucleation and layer growth in nanowires. In situ TEM has also enabled better understanding of the formation of metastable crystal structures in nanowires.

scholarly journals In Situ TEM Observation of a Microcrucible Mechanism of Nanowire Growth

Science ◽  
2014 ◽  
Vol 344 (6184) ◽  
pp. 623-626 ◽  
Author(s):  
R. Boston ◽  
Z. Schnepp ◽  
Y. Nemoto ◽  
Y. Sakka ◽  
S. R. Hall
Keyword(s):  
Nanowire Growth ◽  
In Situ Tem

scholarly journals Studying the Formation Dynamics of VLS Silicon Nanowire Devices using in situ TEM

2016 ◽  
pp. 159-160
Author(s):  
Sardar B. Alam ◽  
Federico Panciera ◽  
Ole Hansen ◽  
Frances M Ross ◽  
Kristian Mølhave
Keyword(s):  
Silicon Nanowire ◽  
In Situ Tem ◽  
Formation Dynamics

scholarly journals In-situ TEM Synthesis of WO2.9 Nanofibers: Characteristics and Growth Mechanism

2006 ◽  
Vol 12 (S02) ◽  
pp. 704-705
Author(s):  
JF Al-Sharab ◽  
RK Sadangi ◽  
V Shukla ◽  
BH Kear
Keyword(s):  
Growth Mechanism ◽  
In Situ Tem

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties

Nanoscale ◽  
2013 ◽  
Vol 5 (11) ◽  
pp. 5086 ◽  
Author(s):  
Chung-Hua Chiu ◽  
Chun-Wei Huang ◽  
Jui-Yuan Chen ◽  
Yu-Ting Huang ◽  
Jung-Chih Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Silicon Nanowire ◽  
In Situ Tem ◽  
Copper Silicide ◽  
Nanowire Heterostructures ◽  
Electron Transport Properties

In situ TEM studies of irradiation effects for materials improvement

1991 ◽  
Vol 49 ◽  
pp. 452-453
Author(s):  
Charles W. Allen
Keyword(s):  
Nuclear Reactor ◽  
Austenitic Stainless Steels ◽  
High Energy ◽  
Point Of View ◽  
In Situ Tem ◽  
Irradiation Effects ◽  
Tem Analysis ◽  
Radiation Induced ◽  
Analytical Tools

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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