scholarly journals Mn-Doped XAlO3 (X = Y, Tb) Single-Crystalline Films Grown onto YAlO3 Substrates: Raman Spectroscopy Study toward Visualization of Mechanical Stress

2021 ◽  
Author(s):  
Wioletta Dewo ◽  
Vitaliy Gorbenko ◽  
Yurii Syrotych ◽  
Yuriy Zorenko ◽  
Tomasz Runka
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Spectroscopy Study ◽  
Single Crystalline ◽  
Crystalline Films ◽  
Mn Doped

Luminescent properties of Mn-doped Y3Al5O12 single crystalline films

2014 ◽  
Vol 36 (10) ◽  
pp. 1680-1684 ◽  
Author(s):  
Yu. Zorenko ◽  
V. Gorbenko ◽  
T. Zorenko ◽  
B. Kuklinski ◽  
M. Grinberg ◽  
...  
Keyword(s):  
Luminescent Properties ◽  
Single Crystalline ◽  
Crystalline Films ◽  
Mn Doped

scholarly journals Raman spectroscopy of Ce3+ doped Lu3Al5O12 single crystalline films grown onto Y3Al5O12 substrate

2019 ◽  
Vol 3 ◽  
pp. 100029
Author(s):  
Wioletta Dewo ◽  
Vitaliy Gorbenko ◽  
Yuriy Zorenko ◽  
Tomasz Runka
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystalline ◽  
Crystalline Films

Exploring the Biological Protective Role of Carotenoids by Raman Spectroscopy: Mechanical Stress of Cells

2019 ◽  
Vol 64 (1-2) ◽  
pp. 75-82
Author(s):  
F. Nekvapil ◽  
◽  
Cs. Müller Molnár ◽  
S. Tomšić ◽  
S. Cintă Pinzaru ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Protective Role

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

scholarly journals Raman spectroscopy study of the behavior of the soft mode in a structural phase transition in the Pr3Sb5O12 crystal

2015 ◽  
Vol 57 (11) ◽  
pp. 2286-2289 ◽  
Author(s):  
A. S. Oreshonkov ◽  
A. K. Khodzhibaev ◽  
A. S. Krylov ◽  
M. F. Umarov ◽  
A. N. Vtyurin
Keyword(s):  
Phase Transition ◽  
Raman Spectroscopy ◽  
Structural Phase Transition ◽  
Soft Mode ◽  
Structural Phase ◽  
Spectroscopy Study

scholarly journals Impact of Magnesium on the Structure of Aluminoborosilicate Glasses: A Solid‐State NMR and Raman Spectroscopy Study

2021 ◽  
Author(s):  
Nicolas Bisbrouck ◽  
Marco Bertani ◽  
Frédéric Angeli ◽  
Thibault Charpentier ◽  
Dominique de Ligny ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Solid State ◽  
Solid State Nmr ◽  
Spectroscopy Study

Raman spectroscopy study of acetonitrile at low temperature

2021 ◽  
Vol 246 ◽  
pp. 119065
Author(s):  
Shuo Zhang ◽  
Hongsheng Jia ◽  
Mingxing Song ◽  
He Shen ◽  
Li Dongfei ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Low Temperature ◽  
Spectroscopy Study
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