Antiferromagnetism-Induced Spin Splitting in Systems Described by Magnetic Layer Groups

2021 ◽  
Author(s):  
Sergei A. Egorov ◽  
Daniel B. Litvin ◽  
Robert A. Evarestov
Keyword(s):  
Magnetic Layer ◽  
Spin Splitting ◽  
Layer Groups

Family-dependent magnetism in atomic boron adsorbed armchair graphene nanoribbons

2019 ◽  
Vol 7 (21) ◽  
pp. 6241-6245 ◽  
Author(s):  
Wei-Wei Yan ◽  
Xiao-Fei Li ◽  
Xiang-Hua Zhang ◽  
Xinrui Cao ◽  
Mingsen Deng
Keyword(s):  
Fermi Level ◽  
Graphene Nanoribbons ◽  
Spin Splitting ◽  
Localized State ◽  
The Family ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene ◽  
Boron Adsorption

Boron adsorption induces a heavily localized state right at the Fermi level only in the family of W = 3p + 1 and thus spin-splitting occurs spontaneously.

Coexistence of Two Types of Spin Splitting Originating from Different Symmetries

2019 ◽  
Vol 122 (12) ◽  
Author(s):  
Koichiro Yaji ◽  
Anton Visikovskiy ◽  
Takushi Iimori ◽  
Kenta Kuroda ◽  
Singo Hayashi ◽  
...  
Keyword(s):  
Spin Splitting

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

scholarly journals Oxidation Behavior of Maraging 300 Alloy Exposed to Nitrogen/Water Vapor Atmosphere at 500 °C

Metals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1021
Author(s):  
Mauro Andres Cerra Florez ◽  
Gemma Fargas Ribas ◽  
Jorge Luiz Cardoso ◽  
Antonio Manuel Mateo García ◽  
Joan Josep Roa Rovira ◽  
...  
Keyword(s):  
Water Vapor ◽  
Oxide Layer ◽  
Magnetic Layer ◽  
Adhesive Force ◽  
Point Of View ◽  
Maraging Steels ◽  
Cobalt Spinel ◽  
Water Vapor Atmosphere ◽  
Iron Nickel ◽  
Ferrite Cobalt

Aging heat treatments in maraging steels are fundamental to achieve the excellent mechanical properties required in several industries, i.e., nuclear, automotive, etc. In this research, samples of maraging 300 alloy were aged using a novel procedure that combines different steps with two atmospheres (nitrogen and water vapor) for several hours. The oxidized surface layer was chemical, microstructural and micromechanically characterized. Due to the thermodynamic and kinetic conditions, these gases reacted and change the surface chemistry of this steel producing a thin iron-based oxide layer of a homogeneous thickness of around 500 nm. Within the aforementioned information, porosity and other microstructural defects showed a non-homogeneous oxide, mainly constituted by magnetite, nickel ferrite, cobalt ferrite, and a small amount of hematite in the more external parts of the oxide layer. In this sense, from a chemical point of view, the heat treatment under specific atmosphere allows to induce a thin magnetic layer in a mixture of iron, nickel, and cobalt spinel ferrites. On the other hand, the oxide layer presents an adhesive force 99 mN value that shows the capability for being used for tribological applications under sliding contact tests.

scholarly journals Spin–valley Hall phenomena driven by Van Hove singularities in blistered graphene

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
M. Umar Farooq ◽  
Arqum Hashmi ◽  
Tomoya Ono ◽  
Li Huang
Keyword(s):  
First Principles ◽  
Opposite Sign ◽  
Spin Splitting ◽  
First Principles Calculations ◽  
Van Hove Singularities ◽  
Spin Degree ◽  
Hall Effects ◽  
Back Scattering ◽  
Structural Deformations ◽  
Spin Momentum

AbstractUsing first-principles calculations, we investigate the possibility of realizing valley Hall effects (VHE) in blistered graphene sheets. We show that the Van Hove singularities (VHS) induced by structural deformations can give rise to interesting spin–valley Hall phenomena. The broken degeneracy of spin degree of freedom results in spin-filtered VH states and the valley conductivity have a Hall plateau of ±e2/2h, while the blistered structures with time-reversal symmetry show the VHE with the opposite sign of $$\sigma _{xy}^{K/K^{\prime}}$$ σ x y K / K ′ (e2/2h) in the two valleys. Remarkably, these results show that the distinguishable chiral valley pseudospin state can occur even in the presence of VHS induced spin splitting. The robust chiral spin–momentum textures in both massless and massive Dirac cones of the blistered systems indicate significant suppression of carrier back-scattering. Our study provides a different approach to realize spin-filtered and spin-valley contrasting Hall effects in graphene-based devices without any external field.

scholarly journals Improvements in the profiles and distributions of nitric acid and nitrogen dioxide with the LIMS version 6 dataset

2010 ◽  
Vol 10 (10) ◽  
pp. 4741-4756 ◽  
Author(s):  
E. Remsberg ◽  
M. Natarajan ◽  
B. T. Marshall ◽  
L. L. Gordley ◽  
R. E. Thompson ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Nitrogen Dioxide ◽  
Theoretical Calculations ◽  
Spin Splitting ◽  
Oxides Of Nitrogen ◽  
Polar Night ◽  
Chemical Effects ◽  
Satellite Sensors ◽  
Precision And Accuracy

Abstract. The quality of the Nimbus 7 Limb Infrared Monitor of the Stratosphere (LIMS) nitric acid (HNO3) and nitrogen dioxide (NO2) profiles and distributions of 1978/1979 are described after their processing with an updated, Version 6 (V6) algorithm and subsequent archival in 2002. Estimates of the precision and accuracy of both of those species are developed and provided herein. The character of the V6 HNO3 profiles is relatively unchanged from that of the earlier LIMS Version 5 (V5) profiles, except in the upper stratosphere where the interfering effects of CO2 are accounted for better with V6. The accuracy of the retrieved V6 NO2 is also significantly better in the middle and upper stratosphere, due to improvements in its spectral line parameters and in the reduced biases for the accompanying V6 temperature and water vapor profiles. As a result of these important updates, there is better agreement with theoretical calculations for profiles of the HNO3/NO2 ratio, day-to-night NO2 ratio, and with estimates of the production of NO2 in the mesosphere and its descent to the upper stratosphere during polar night. In particular, the findings for middle and upper stratospheric NO2 should also be more compatible with those obtained from more recent satellite sensors because the effects of the spin-splitting of the NO2 lines are accounted for now with the LIMS V6 algorithm. The improved precisions and more frequent retrievals of the LIMS profiles along their orbit tracks provide for better continuity and detail in map analyses of these two species on pressure surfaces. It is judged that the chemical effects of the oxides of nitrogen on ozone can be studied quantitatively throughout the stratosphere with the LIMS V6 data.

scholarly journals Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor

2021 ◽  
Vol 7 (5) ◽  
pp. eabe2892
Author(s):  
Dmitry Shcherbakov ◽  
Petr Stepanov ◽  
Shahriar Memaran ◽  
Yaxian Wang ◽  
Yan Xin ◽  
...  
Keyword(s):  
Electric Field ◽  
High Mobility ◽  
Orbit Coupling ◽  
Spin Splitting ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Quantum Oscillations ◽  
Out Of Plane ◽  
Order Of Magnitude ◽  
Spin Degeneracy

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic, and topological phenomena and applications. In bulk materials, SOC strength is a constant. Here, we demonstrate SOC and intrinsic spin splitting in atomically thin InSe, which can be modified over a broad range. From quantum oscillations, we establish that the SOC parameter α is thickness dependent; it can be continuously modulated by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Unexpectedly, α could be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.

scholarly journals Nonreciprocal charge transport up to room temperature in bulk Rashba semiconductor α-GeTe

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yan Li ◽  
Yang Li ◽  
Peng Li ◽  
Bin Fang ◽  
Xu Yang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Room Temperature ◽  
Theoretical Calculations ◽  
Ferromagnetic Layer ◽  
Spin Splitting ◽  
New Paradigm ◽  
Rashba Spin ◽  
Rashba Spin Splitting ◽  
Fundamental Insight ◽  
Insight Into

AbstractNonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.

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