Tuning the Sheet Resistance, Ferromagnetism, and H2O2 Sensitivity of ITO Film by Introducing Tunable Pores

Author(s):  
Zeyu Shi ◽  
Jianhui Zhang ◽  
Cheng Fang ◽  
Xi Chen ◽  
Zhishan Zhang ◽  
...  
2006 ◽  
Vol 11-12 ◽  
pp. 171-174
Author(s):  
Sheng Jie Piao ◽  
Jia Xiang Liu ◽  
Nan Zhang

Transparent conductive ITO films were fabricated on soda lime float glass substrate by colloid dip-coating technique from indium metal ingots and hydrous tin(IV) chloride. It was systematically studied that the effect of the electrical, the structure and optical properties of the ITO doped Sn in quantitative change and different heat-treating process by XRD, UV-VIS spectrophotometer and four-probe instrument. The results indicated that only cubic In2O3 phase was observed from the X-ray diffraction; with the amount of doped Snincreasing, the sheet resistance of ITO was up to minimumand thenincreased. The sheet resistance value decreased with the increase of the annealing temperature and holding time; the transmissivity of the ITO films was higher than 80% in 550 nm wavelength. The lowest sheet resistance value of ITO film which was 300nm thick was 153 ohms per square, which wasannealed at 600°C for 1h and doped Sn 10% (wt).


2014 ◽  
Vol 988 ◽  
pp. 125-129 ◽  
Author(s):  
Yun Hae Kim ◽  
Jin Woo Lee ◽  
Riichi Murakami ◽  
Dong Myung Lee ◽  
Jin Cheol Ha ◽  
...  

Transparent conductive layers on flexible substrates are important components of today’s optoelectronic technology. They are used in filters for plasma displays, low-e windows, solar cells, etc. At present, in-doped indium oxide (ITO) layers on PET substrate is the predominant transparent conducting oxide film in diverse practical applications. However, ITO is a relatively expensive material because indium is not abundant, but aluminum-doped zinc oxide (AZO) film is emerging as an alternative potential candidate to ITO thin film due to its abundance as a raw material, nontoxic nature, cost-effectiveness, easy fabrication, and good stability in plasma. They have, however, several drawbacks: they exhibit relatively high electrical resistance (sheet resistance, 20-200Ω), considerable emissivity, and significant absorption in the spectral region 1-2μm, in which transition from high transmittance to high reflectance takes place. Furthermore, these films do not block solar thermal radiation (0.7-3μm), which may cause overheating problems to devices such as electro-chromic and photovoltaic devices. On the other hand, ITO/Ag/ITO multilayer films are used to achieve high transparent conducting properties. A thin silver layer of about 10nm thickness is embedded between two ITO layers. The ITO/Ag/ITO film has very low sheet resistance, high optical transparency in the visible range, relatively lower thickness than single-layered ITO film, and better durability than single-layered silver film. In terms of ZnO, which is a wide direct band-gap semiconductor, ZnO has a band-gap energy of 3.37 eV with a binding energy as high as 60 meV at room temperature. ZnO has been applied to various domains for excellent physical and chemical properties, such as piezoelectric sensors, rheostats , gas sensors, semiconductor lasers, and transparent conductive films.


Metals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 120 ◽  
Author(s):  
Hae-Jun Seok ◽  
Han-Ki Kim

We have studied characteristics of tin-doped indium oxide (ITO) films sputtered on flexible invar metal foil covered with an insulating SiO2 layer at room temperature to use as transparent electrodes coated substrates for curved perovskite solar cells. Sheet resistance, optical transmittance, surface morphology, and microstructure of the ITO films on SiO2/invar substrate are investigated as a function of the thickness from 50 to 200 nm. The optimized ITO film exhibits a low sheet resistance of 50.21 Ohm/square and high optical transmittance of up to 94.31% even though it is prepared at room temperature. In particular, high reflectance of invar metal substrate could enhance the power conversion efficiency of curved perovskite solar cell fabricated on the ITO/SiO2/invar substrate. In addition, critical bending radius of the 150 nm-thick ITO film is determined by lab-designed outer and inner bending tests to show feasibility as flexible electrode. Furthermore, dynamic fatigue test is carried out to show flexibility of the ITO film on invar metal substrate. This suggests that the ITO/SiO2/invar substrate can be applied as flexible electrodes and substrates for curved perovskite solar cells.


2014 ◽  
Vol 24 (3S1) ◽  
pp. 64-70
Author(s):  
Hoang Thi Thu ◽  
Huynh Tran My Hoa ◽  
Pham Hoai Phuong ◽  
Nguyen Huynh Nhu ◽  
Tran Quang Trung ◽  
...  

Herein we report a electrode in the hybrid  structure of the silver nanowires (AgNWs) with reduced graphene oxide (rGO) deposited on glass or PET substrate. The assembly and contacting in procedures of this hybrid film have been strongly affected by preparation conditions, especially annealing temperature. In this work, we have investigated the effects of thermal annealing on interconnected at nanowire junctions and between AgNWS network and rGO films via their sheet resistance and transmission. The annealing temperature was varied from 120\(^{\circ}\)C to 180\(^{\circ}\)C with 10\(^{\circ}\)C step to find out optimal temperature at which the wires can be joined together. The results show that at 170\(^{\circ}\)C, the sheet resistance and transmission of the hybrid rGO/Ag NW film are \(R_{s} = 10.7\;\Omega\) sq\(^{ - 1 }\) and \(T = 77\)% (at wavelength 550 nm) corresponding to the ratio of direct conductivity to optical conductivity \(\sigma _{DC}/\sigma _{OP} = 126\) which is the best obtained value. It is expected that the hybrid AgNWS/rGO film can replace ITO film in the near future.


2013 ◽  
Vol 552 ◽  
pp. 162-167
Author(s):  
Min Rui Wang ◽  
Bin Yu ◽  
Yu Xia Wang

The samples of Ag/ITO multilayer films with different Ag insert layer thickness (0.5, 2, 4 nm) were prepared on sapphire and p-GaN substrates. The effects of the Ag layer thickness, annealing temperature and annealing time on the transmittance, sheet resistance and specific contact resistance of Ag/ITO films were investigated. The experiment results show that the transmittance is obviously affected by Ag insert layer thickness. The Current–voltage (I–V) measurements indicate that the sheet resistance and specific contact resistance of Ag/ITO film on p-GaN are lower than those of single ITO film. The samples with Ag(0.5nm)/ITO film on p-GaN produce the low specific contact resistance of ~1.386×10-4Ω•cm2 , low sheet resistance of ~11Ω/sq and high transmittance of ~ 90% at 455nm when the samples are annealed at 600°C for 10 minutes.


2013 ◽  
Vol 25 ◽  
pp. 55-60 ◽  
Author(s):  
C.M. Zimmer ◽  
C. Asbeck ◽  
D. Lützenkirchen-Hecht ◽  
P. Glösekötter ◽  
K.T. Kallis

LaB6/ITO films were prepared by magnetron sputtering technique on borosilicate glass substrates. The transmittance of ITO and LaB6/ITO films was analyzed by using UV/VIS spectrophotometer, whereby the sheet resistance of the ITO films was measured by four point probes. The effect of temperature and post-annealing processes on ITO film properties optimizing UV transparency and sheet resistance were investigated in detail. ITO films with an optimized thickness of 31 nm exhibited a low sheet resistance of 64 Ω/sq and a high ultraviolet transmittance of 81% at a wavelength of 365 nm. The additional LaB6 layer controls the UV transmittance behavior of the bilayer structure of LaB6/ITO by improving the photon absorption with thicker LaB6 films. The work function of LaB6 (32 nm)/ITO films with a value of 4.98 eV was measured by ultraviolet photoelectron spectroscopy (UPS).


2021 ◽  
pp. 2150094
Author(s):  
NASER M. AHMED ◽  
NOOR HUMAM SULAIMAN ◽  
MAHIR FARIS ABDULLAH ◽  
ASMAA SOHEIL NAJM ◽  
NAVEED AFZAL ◽  
...  

Indium Tin Oxide (ITO) films were deposited on glass substrate using radiofrequency (RF) magnetron sputtering technique. To improve the physical characteristics of the ITO film, AlN and HfO2 buffer layers were deposited on glass prior to the film deposition. The ITO/glass, ITO/AlN/glass and ITO/HfO2/glass films were annealed using CO2 laser and electrical oven heating methods. The crystallinity of the ITO film was improved due to the incorporation of AlN and HfO2 buffer layers and also by the post-deposition annealing process. The optical transmittance of the ITO was also increased due to the presence of the buffer layers. Similarly, the annealed ITO films grown on buffer layers exhibited lower values of the sheet resistance as compared to the film deposited without buffer layers. The laser annealing technique was more found to be more effective in reducing the ITO sheet resistance.


2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.


2020 ◽  
Vol 35 (9) ◽  
pp. 908-913
Author(s):  
Wei-xing GONG ◽  
◽  
Tao YU ◽  
Wei-zhi WANG ◽  
Jia-lun ZHANG ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ji-Young Jeong ◽  
Je-Ryung Lee ◽  
Hyeonjin Park ◽  
Joonkyo Jung ◽  
Doo-Sun Choi ◽  
...  

AbstractMicrowave absorbers using conductive ink are generally fabricated by printing an array pattern on a substrate to generate electromagnetic fields. However, screen printing processes are difficult to vary the sheet resistance values for different regions of the pattern on the same layer, because the printing process deposits materials at the same height over the entire surface of substrate. In this study, a promising manufacturing process was suggested for engraved resistive double square loop arrays with ultra-wide bandwidth microwave. The developed manufacturing process consists of a micro-end-milling, inking, and planing processes. A 144-number of double square loop array was precisely machined on a polymethyl methacrylate workpiece with the micro-end-milling process. After engraving array structures, the machined surface was completely covered with the developed conductive carbon ink with a sheet resistance of 15 Ω/sq. It was cured at room temperature. Excluding the ink that filled the machined double square loop array, overflowed ink was removed with the planing process to achieve full filled and isolated resistive array patterns. The fabricated microwave absorber showed a small radar cross-section with reflectance less than − 10 dB in the frequency band range of 8.0–14.6 GHz.


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