Theoretical Study of Oxygen-Vacancy Distribution in In2O3

2021 ◽  
Vol 125 (13) ◽  
pp. 7077-7085
Author(s):  
Lu Liu ◽  
Chang-Chun He ◽  
Jiarui Zeng ◽  
Yin-Hui Peng ◽  
Wan-Yu Chen ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Theoretical Study ◽  
Vacancy Distribution

scholarly journals Oxygen vacancy related distortions in rutileTiO2nanoparticles: A combined experimental and theoretical study

2016 ◽  
Vol 94 (23) ◽  
Author(s):  
G. C. Vásquez ◽  
S. Zh. Karazhanov ◽  
D. Maestre ◽  
A. Cremades ◽  
J. Piqueras ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Theoretical Study

Oxygen vacancy induced photoconductivity enhancement in Bi1-xCaxFeO3-δ nanoparticle ceramics: A combined experimental and theoretical study

2018 ◽  
Vol 124 (19) ◽  
pp. 195108 ◽  
Author(s):  
Subhajit Nandy ◽  
Kulwinder Kaur ◽  
Pavana S. V. Mocherla ◽  
B. R. K. Nanda ◽  
C. Sudakar
Keyword(s):  
Oxygen Vacancy ◽  
Theoretical Study

Time-dependent oxygen vacancy distribution and gas sensing characteristics of tin oxide gas sensitive thin films

2010 ◽  
Vol 150 (1) ◽  
pp. 330-338 ◽  
Author(s):  
Jianqiao Liu ◽  
Shuping Gong ◽  
Qiuyun Fu ◽  
Yi Wang ◽  
Lin Quan ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Tin Oxide ◽  
Gas Sensing ◽  
Time Dependent ◽  
Vacancy Distribution ◽  
Sensing Characteristics

scholarly journals Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2204
Author(s):  
Chih-Chieh Hsu ◽  
Po-Tsun Liu ◽  
Kai-Jhih Gan ◽  
Dun-Bao Ruan ◽  
Simon M. Sze
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Concentration ◽  
Random Access ◽  
Single Layer ◽  
Random Access Memory ◽  
Access Memory ◽  
Atomic Force ◽  
Conductive Bridge ◽  
Vacancy Distribution ◽  
Memory Applications

In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.

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