Effect of (CH3)2Sn(COOH)2 Electron Transport Layer Thickness on Device Performance in n-i-p Planar Heterojunction Perovskite Solar Cells

Author(s):  
Fumin Li ◽  
Mingxing Ji ◽  
Qing Du ◽  
Jihong Zheng ◽  
Mengqi Jin ◽  
...  
2018 ◽  
Vol 6 (17) ◽  
pp. 7409-7419 ◽  
Author(s):  
Zhiyong Liu ◽  
Bo Sun ◽  
Xingyue Liu ◽  
Jinghui Han ◽  
Haibo Ye ◽  
...  

Low-temperature printable carbon based planar-heterojunction perovskite solar cells with efficiencies exceeding 15% were demonstrated by using a TiO2/SnO2bilayer as ETL together with CuPc as HTL.


2019 ◽  
Vol 29 (46) ◽  
pp. 1905694 ◽  
Author(s):  
Lin Yang ◽  
Chunxiang Dall'Agnese ◽  
Yohan Dall'Agnese ◽  
Gang Chen ◽  
Yu Gao ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3090
Author(s):  
Jun Choi ◽  
Young Ki Park ◽  
Hee Dong Lee ◽  
Seok Il Hong ◽  
Woosung Lee ◽  
...  

A robust electron transport layer (ETL) is an essential component in planar-heterojunction perovskite solar cells (PSCs). Herein, a sol-gel-driven ZrSnO4 thin film is synthesized and its optoelectronic properties are systematically investigated. The optimized processing conditions for sol-gel synthesis produce a ZrSnO4 thin film that exhibits high optical transmittance in the UV-Vis-NIR range, a suitable conduction band maximum, and good electrical conductivity, revealing its potential for application in the ETL of planar-heterojunction PSCs. Consequently, the ZrSnO4 ETL-based devices deliver promising power conversion efficiency (PCE) up to 19.05% from CH3NH3PbI3-based planar-heterojunction devices. Furthermore, the optimal ZrSnO4 ETL also contributes to decent long-term stability of the non-encapsulated device for 360 h in an ambient atmosphere (T~25 °C, RH~55%,), suggesting great potential of the sol-gel-driven ZrSnO4 thin film for a robust solution-processed ETL material in high-performance PSCs.


2016 ◽  
Vol 4 (22) ◽  
pp. 8724-8733 ◽  
Author(s):  
Hua Zhang ◽  
Lingwei Xue ◽  
Junbo Han ◽  
Yong Qing Fu ◽  
Yan Shen ◽  
...  

In this study, for the first time, we introduced amino-substituted perylene diimide derivative (N-PDI) as an alternative electron transport layer (ETL) to replace the commonly used TiO2 in planar heterojunction perovskite solar cells.


Author(s):  
U.C. Obi ◽  
D.M. Sanni ◽  
A. Bello

Theoretical study of methyl-ammonium bismuth halide perovskite solar cells, (CH3NH3)3Bi2I9, was carried out using a one-dimensional Solar Cell Capacitance Simulator (SCAPS-1D) software. The performance of the tested device architectures largely depends on the thickness of the absorbing layer, with the combination of electron transport, and hole transport layers. Thus, the bismuth perovskite absorber layer was optimized by varying the thickness and also, the thicknesses of the different charge-transport materials such as Spiro-OmeTAD, copper (I) oxide (Cu2O), and copper (I) iodide (CuI) as hole transport layer (HTL), and phenyl-C61-butyric acid methyl ester (PCBM), poly(3-hexylthiophene-2,5-diyl) (P3HT), zinc oxide, and titanium dioxide as electron transport layer (ETL). The best performance in terms of the power conversion efficiency (PCE) was recorded for the device with Cu2O as the HTL and ZnO as the ETL with the absorber layer thickness of 200 nm. The working temperature of the device was varied from 295 to 320 K and the effects of temperature on various device architectures were investigated. Results obtained indication that the efficiency of the bismuth perovskite solar cells can be improved by optimizing the thickness of the absorber layer and utilizing an appropriate combination of HTLs and ETLs. Keywords: methyl-ammonium bismuth perovskite, SCAPS, HTL, ETL, PCE.


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