scholarly journals Large-Scale Screening of Interface Parameters in the WC/W System Using Classical Force Field and First-Principles Calculations

2021 ◽  
Vol 125 (6) ◽  
pp. 3631-3639
Author(s):  
Emil Edin ◽  
Andreas Blomqvist ◽  
Wei Luo ◽  
Rajeev Ahuja
2003 ◽  
Author(s):  
S. V. Piskunov ◽  
R. A. Evarestov ◽  
Eugene A. Kotomin ◽  
R. I. Eglitis ◽  
G. Borstel

1993 ◽  
Vol 321 ◽  
Author(s):  
C. Molteni ◽  
L. Colombo ◽  
L. Miglio

ABSTRACTWe investigate the short-range structural properties of a-GaAs as obtained in a computer experiment based on a tight-binding molecular dynamics simulation. The amorphous configuration is obtained by quenching a liquid sample well equilibrated at T=1600 K. A detailed characterization of the topology and defect distribution of the amorphous network is presented and discussed. The electronic structure of our sample is calculated as well. Finally, we discuss the reliability and transferability of the present computational scheme for large-scale simulations of compound semiconductor materials by comparing our results to first-principles calculations.


2018 ◽  
Vol 6 (25) ◽  
pp. 6680-6690 ◽  
Author(s):  
Jianli Cheng ◽  
Kesong Yang

This work demonstrates an efficient approach to design perovskite-oxide-based two dimensional electron gas systems using large-scale first-principles calculations.


1992 ◽  
Vol 291 ◽  
Author(s):  
Furio Ercolessi ◽  
James B. Adams

ABSTRACTWe propose a new scheme to extract “optimal” interatomic potentials starting from a large number of atomic configurations (and their forces) obtained from first-principles calculations. The method appears to be able to overcome the difficulties encountered by traditional fitting approaches when using rich and complex analytical forms, and constitute a step forward towards large-scale simulations of condensed matter systems with a degree of accuracy comparable to that obtained by ab initio methods. A first exploratory application to aluminum is presented.


2010 ◽  
Vol 645-648 ◽  
pp. 597-602 ◽  
Author(s):  
Hiroyuki Kageshima ◽  
Hiroki Hibino ◽  
Masao Nagase

Epitaxial graphene growth on SiC is investigated using low-energy electron microscopy (LEEM) and first-principles calculations. LEEM is one of the most powerful tools to identify the thickness of graphene on SiC with a good spatial resolution. With the help of such LEEM, the thickness-dependent physical properties are identified by various experiments. It is shown that epitaxial graphene sheets continue even over steps of the substrate, and that a new graphene sheet often grows from step edges while the surface morphology changes drastically. Furthermore, the first-principles calculations also show the energetics of the epitaxial graphene growth on SiC. It is expected that the fine control of epitaxial graphene growth on SiC will open the way to novel graphene devices in the post-scaling era of the ultra-large-scale integrations (ULSI).


2021 ◽  
Author(s):  
Christopher Walker ◽  
Garrett Meek ◽  
Theodore Fobe ◽  
Michael R. Shirts

We describe a process to build and simulate coarse-grained oligomers using temperature replica exchange molecular dynamics and analyze them for thermodynamic and structural characteristics of cooperative folding transitions. We also introduce a Python package (cg_openmm) to carry out these simulations and analyses. We demonstrate the capabilities of cg_openmm on a simple helix-forming homo-oligomer, systematically varying sets of force field parameters and studying the effects on folding cooperativity and helix stability. We find that small changes to force field parameters in the homo-oligomer model can dramatically affect cooperativity, stability, and even lead to helix-to-helix transitions. This software package enables large-scale screening of potential foldamer molecules and will be highly useful in the broader effort of understanding secondary structure formation in terms of non-chemically specific features of molecular models.


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