Predicting Epitaxial Nanocrystal Morphology Governed by Interfacial Strain—The Case for NiO on SrTiO3

2021 ◽  
Author(s):  
Hongwei Liu ◽  
Xuan Cheng ◽  
Nagarajan Valanoor
Keyword(s):  
Interfacial Strain

scholarly journals Two-Dimensional Layered Oxide Structures Tailored by Self-Assembled Layer Stacking via Interfacial Strain

2016 ◽  
Vol 8 (26) ◽  
pp. 16845-16851 ◽  
Author(s):  
Wenrui Zhang ◽  
Mingtao Li ◽  
Aiping Chen ◽  
Leigang Li ◽  
Yuanyuan Zhu ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Layered Oxide ◽  
Layer Stacking ◽  
Interfacial Strain ◽  
Self Assembled ◽  
Self Assembled Layer

Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy

2004 ◽  
Vol 457-460 ◽  
pp. 277-280 ◽  
Author(s):  
Etienne Bustarret ◽  
Daniel Araújo ◽  
David Méndez ◽  
Francisco M. Morales ◽  
F.J. Pacheco ◽  
...  
Keyword(s):  
Interfacial Strain

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Driving magnetic domains at the nanoscale by interfacial strain-induced proximity

Nanoscale ◽  
2021 ◽  
Author(s):  
Ilya Valmianski ◽  
Arantxa Fraile Rodríguez ◽  
Javier Rodríguez-Álvarez ◽  
Montserrat García del Muro ◽  
Christian Wolowiec ◽  
...  
Keyword(s):  
Phase Transition ◽  
Magnetic Anisotropy ◽  
Structural Phase Transition ◽  
Structural Phase ◽  
Magnetic Domains ◽  
Interfacial Strain

Temperature-driven reorientation of magnetic domains in a thin Ni film across the structural phase transition of promixity-coupled V2O3 layer, giving rise to large chances in the magnetic anisotropy of the Ni film, of relevance for straintronics.

scholarly journals Nitrone Modified Gold Nanoparticles: Synthesis, Characterization and Their Potential as 18F-Labeled PET Probes via I-SPANC

2019 ◽  
Author(s):  
Sara Ghiassian ◽  
Lihai Yu ◽  
Pierangelo Gobbo ◽  
Ali nazemi ◽  
Tommaso Romagnoli ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Nmr Spectroscopy ◽  
Gold Nanoparticle ◽  
Molecular Level ◽  
Prosthetic Group ◽  
H Nmr ◽  
Nanoparticles Synthesis ◽  
Interfacial Strain ◽  
Pet Probes ◽  
High Degree

A bioorthogonal gold nanoparticle template displaying interfacial nitrone functional groups for bioorthogonal interfacial strain-promoted alkyne-nitrone cycloaddition (I-SPANC) reactions has been synthesized. The Nitrone-AuNPs were characterized in detail using <sup>1</sup>H NMR spectroscopy, TEM, TGA, and XPS and a nanoparticle raw formula was calculated. The ability to control the conjugation of molecules of interest at the molecular level onto the Nitrone-AuNPs template allowed us to create a methodology for the synthesis of AuNP-based radiolabeled probes with a high degree of loading using copper free, strained-promoted cycloaddition. To this end, we also describe the synthesis of a new prosthetic group containing a strained-alkyne capable of clicking hot <sup>18</sup>F-label onto complementary azide or nitrone labelled agents.

Interfacial strain effect on type-I and type-II core/shell quantum dots

2016 ◽  
Vol 97 ◽  
pp. 489-494 ◽  
Author(s):  
Negar Gheshlaghi ◽  
Hadi Sedaghat Pisheh ◽  
M. Rezaul Karim ◽  
Derya Malkoc ◽  
Hilmi Ünlü
Keyword(s):  
Quantum Dots ◽  
Strain Effect ◽  
Core Shell ◽  
Type I ◽  
Type Ii ◽  
Interfacial Strain
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