scholarly journals Doping of III–V Arsenide and Phosphide Wurtzite Semiconductors

2020 ◽  
Vol 124 (49) ◽  
pp. 27203-27212
Author(s):  
Giacomo Giorgi ◽  
Michele Amato ◽  
Stefano Ossicini ◽  
Xavier Cartoixà ◽  
Enric Canadell ◽  
...  
Keyword(s):  
Wurtzite Semiconductors

scholarly journals Photogeneration of coherent shear phonons in orientated wurtzite semiconductors by piezoelectric coupling

2009 ◽  
Vol 80 (19) ◽  
Author(s):  
Yu-Chieh Wen ◽  
Tsung-Shine Ko ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Piezoelectric Coupling ◽  
Wurtzite Semiconductors

Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO

1983 ◽  
Vol 28 (2) ◽  
pp. 935-945 ◽  
Author(s):  
Akiko Kobayashi ◽  
Otto F. Sankey ◽  
Stephen M. Volz ◽  
John D. Dow
Keyword(s):  
Tight Binding ◽  
Band Structures ◽  
Wurtzite Semiconductors

The tuning effect of the electric field on the physical properties of some typical wurtzite semiconductors

2017 ◽  
Vol 31 (33) ◽  
pp. 1750310 ◽  
Author(s):  
Jia-Ning Li ◽  
San-Lue Hu ◽  
Hao-Yu Dong ◽  
Xiao-Ying Xu ◽  
Jia-Fu Wang ◽  
...  
Keyword(s):  
Electric Field ◽  
Physical Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Density Functional ◽  
Great Influence ◽  
Semiconductor Materials ◽  
Functional Theory ◽  
The Stability ◽  
Wurtzite Semiconductors

Under the tuning of an external electric field, the variation of the geometric structures and the band gaps of the wurtzite semiconductors ZnS, ZnO, BeO, AlN, SiC and GaN have been investigated by the first-principles method based on density functional theory. The stability, density of states, band structures and the charge distribution have been analyzed under the electric field along (001) and (00[Formula: see text]) directions. Furthermore, the corresponding results have been compared without the electric field. According to our calculation, we find that the magnitude and the direction of the electric field have a great influence on the electronic structures of the wurtzite materials we mentioned above, which induce a phase transition from semiconductor to metal under a certain electric field. Therefore, we can regulate their physical properties of this type of semiconductor materials by tuning the magnitude and the direction of the electric field.

Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semiconductors

1998 ◽  
Vol 57 (24) ◽  
pp. 15303-15314 ◽  
Author(s):  
M. Kumagai ◽  
S. L. Chuang ◽  
H. Ando
Keyword(s):  
Analytical Solutions ◽  
Wurtzite Semiconductors

Deep energy levels of defects in the wurtzite semiconductors AIN, CdS, CdSe, ZnS, and ZnO

1983 ◽  
Vol 28 (2) ◽  
pp. 946-956 ◽  
Author(s):  
Akiko Kobayashi ◽  
Otto F. Sankey ◽  
John D. Dow
Keyword(s):  
Energy Levels ◽  
Wurtzite Semiconductors

Internal structure of the neutral donor-bound exciton complex in cubic zinc-blende and wurtzite semiconductors

2007 ◽  
Vol 75 (8) ◽  
Author(s):  
Bernard Gil ◽  
Pierre Bigenwald ◽  
Mathieu Leroux ◽  
Plamen P. Paskov ◽  
Bo Monemar
Keyword(s):  
Internal Structure ◽  
Neutral Donor ◽  
Zinc Blende ◽  
Wurtzite Semiconductors

scholarly journals Spin-relaxation time in the impurity band of wurtzite semiconductors

2017 ◽  
Vol 96 (12) ◽  
Author(s):  
Pablo I. Tamborenea ◽  
Thomas Wellens ◽  
Dietmar Weinmann ◽  
Rodolfo A. Jalabert
Keyword(s):  
Relaxation Time ◽  
Spin Relaxation ◽  
Impurity Band ◽  
Spin Relaxation Time ◽  
Wurtzite Semiconductors
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