scholarly journals Surface Defects as Ingredients That Can Improve or Inhibit the Pathways for CO Oxidation at Low Overpotentials Using Pt(111)-Type Catalysts

2020 ◽  
Vol 124 (49) ◽  
pp. 26583-26595
Author(s):  
Manuel J. S. Farias ◽  
Adilson L. P. Silva ◽  
Auro A. Tanaka ◽  
Enrique Herrero ◽  
Juan M. Feliu
Keyword(s):  
Co Oxidation ◽  
Surface Defects

C, N co-doping promoted mesoporous Au/TiO2 catalyst for low temperature CO oxidation

RSC Advances ◽  
2016 ◽  
Vol 6 (34) ◽  
pp. 28904-28911 ◽  
Author(s):  
Liang Li ◽  
Binghan Wu ◽  
Gengnan Li ◽  
Yongsheng Li
Keyword(s):  
Low Temperature ◽  
Co Oxidation ◽  
Surface Defects ◽  
Catalytic Activities ◽  
Co Doping ◽  
Support Interaction ◽  
Metal Support Interaction ◽  
Metal Support ◽  
Low Temperature Co Oxidation ◽  
C And N

The doping of C and N into meso-structured TiO2 increases the number of surface defects which could improve the absorption of oxygen, tune the metal-support interaction and promote the catalytic activities for CO oxidation.

scholarly journals Investigations of the Effect of H2 in CO Oxidation over Ceria Catalysts

Catalysts ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1556
Author(s):  
Arantxa Davó-Quiñonero ◽  
Sergio López-Rodríguez ◽  
Cristian Chaparro-Garnica ◽  
Iris Martín-García ◽  
Esther Bailón-García ◽  
...  
Keyword(s):  
Co Oxidation ◽  
Density Functional ◽  
Hydrogen Transfer ◽  
Surface Defects ◽  
Co Adsorption ◽  
Oxidation Mechanism ◽  
Density Functional Theory Calculations ◽  
Hydroxyl Groups ◽  
Selective Co Oxidation ◽  
Physicochemical Features

The preferential CO oxidation (so-called CO-PROX) is the selective CO oxidation amid H2-rich atmospheres, a process where ceria-based materials are consolidated catalysts. This article aims to disentangle the potential CO–H2 synergism under CO-PROX conditions on the low-index ceria surfaces (111), (110) and (100). Polycrystalline ceria, nanorods and ceria nanocubes were prepared to assess the physicochemical features of the targeted surfaces. Diffuse reflectance infrared Fourier-transformed spectroscopy (DRIFTS) shows that ceria surfaces are strongly carbonated even at room temperature by the effect of CO, with their depletion related to the CO oxidation onset. Conversely, formate species formed upon OH + CO interaction appear at temperatures around 60 °C and remain adsorbed regardless the reaction degree, indicating that these species do not take part in the CO oxidation. Density functional theory calculations (DFT) reveal that ceria facets exhibit high OH coverages all along the CO-PROX reaction, whilst CO is only chemisorbed on the (110) termination. A CO oxidation mechanism that explains the early formation of carbonates on ceria and the effect of the OH coverage in the overall catalytic cycle is proposed. In short, hydroxyl groups induce surface defects on ceria that increase the COx–catalyst interaction, revealed by the CO adsorption energies and the stabilization of intermediates and readsorbed products. In addition, high OH coverages are shown to facilitate the hydrogen transfer to form less stable HCOx products, which, in the case of the (110) and (100), is key to prevent surface poisoning. Altogether, this work sheds light on the yet unclear CO–H2 interactions on ceria surfaces during CO-PROX reaction, providing valuable insights to guide the design of more efficient reactors and catalysts for this process.

The Role of Surface Defects in CO Oxidation, Methanol Oxidation, and Oxygen Reduction on Pt(111)

2007 ◽  
Vol 154 (12) ◽  
pp. F238 ◽  
Author(s):  
Jacob S. Spendelow ◽  
Qinqin Xu ◽  
Jason D. Goodpaster ◽  
Paul J. A. Kenis ◽  
Andrzej Wieckowski
Keyword(s):  
Co Oxidation ◽  
Oxygen Reduction ◽  
Methanol Oxidation ◽  
Surface Defects

Defects in Crystals

1968 ◽  
Vol 26 ◽  
pp. 244-245
Author(s):  
Kenneth R. Lawless
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Surface Defects ◽  
Chemical Properties ◽  
Material Point ◽  
Crystal Defects ◽  
Defects In Crystals ◽  
Irradiation Effects ◽  
Normal Lattice ◽  
Line Defects

One of the most important applications of the electron microscope in recent years has been to the observation of defects in crystals. Replica techniques have been widely utilized for many years for the observation of surface defects, but more recently the most striking use of the electron microscope has been for the direct observation of internal defects in crystals, utilizing the transmission of electrons through thin samples.Defects in crystals may be classified basically as point defects, line defects, and planar defects, all of which play an important role in determining the physical or chemical properties of a material. Point defects are of two types, either vacancies where individual atoms are missing from lattice sites, or interstitials where an atom is situated in between normal lattice sites. The so-called point defects most commonly observed are actually aggregates of either vacancies or interstitials. Details of crystal defects of this type are considered in the special session on “Irradiation Effects in Materials” and will not be considered in detail in this session.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Contrasts of planar defects in reflection electron microscopy

1993 ◽  
Vol 51 ◽  
pp. 1004-1005
Author(s):  
Feng Tsai ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Practical Importance ◽  
Theoretical Treatment ◽  
Crystal Surfaces ◽  
Planar Defects ◽  
Surface Steps ◽  
Surface Reconstructions ◽  
Domain Boundaries ◽  
Reflection Electron Microscopy

Reflection electron microscopy (REM) has been used to study surface defects such as surface steps, dislocations emerging on crystal surfaces, and surface reconstructions. However, only a few REM studies have been reported about the planar defects emerging on surfaces. The interaction of planar defects with surfaces may be of considerable practical importance but so far there seems to be only one relatively simple theoretical treatment of the REM contrast and very little experimental evidence to support its predications. Recently, intersections of both 90° and 180° ferroelectric domain boundaries with BaTiO3 crystal surfaces have been investigated by Tsai and Cowley with REM.The REM observations of several planar defects, such as stacking faults and domain boundaries have been continued by the present authors. All REM observations are performed on a JEM-2000FX transmission electron microscope. The sample preparations may be seen somewhere else. In REM, the incident electron beam strikes the surface of a crystal with a small glancing angle.

Electron Channelling Contrast Imaging of Dislocations

1990 ◽  
Vol 48 (1) ◽  
pp. 600-601
Author(s):  
J.T. Czernuszka ◽  
N.J. Long ◽  
P.B. Hirsch
Keyword(s):  
Field Emission ◽  
Secondary Electron ◽  
Surface Defects ◽  
Spot Size ◽  
Beam Divergence ◽  
Contrast Imaging ◽  
Scattered Electron ◽  
Near Surface ◽  
Filter System ◽  
Electron Channelling

In the 1970s there was considerable interest in the development of the electron channelling contrast imaging (ECCI) technique for imaging near surface defects in bulk (electron opaque) specimens. The predictions of the theories were realised experimentally by Morin et al., who used a field emission gun (FEG) operating at 40-50kV and an energy filter such that only electrons which had lost no more than a few 100V were detected. This paper presents the results of a set of preliminary experiments which show that an energy filter system is unneccessary to image and characterise the Burgers vectors of dislocations in bulk specimens. The examples in the paper indicatethe general versatility of the technique.A VG HB501 STEM with a FEG was operated at 100kV. A single tilt cartridge was used in the reflection position of the microscope. A retractable back-scattered electron detector was fitted into the secondary electron port and positioned to within a few millimetres of the specimen. The image was acquired using a Synoptics Synergy framestore and digital scan generator and subsequently processed using Semper 6. The beam divergence with the specimen in this position was 2.5 mrads with a spot size of approximately 4nm. Electron channelling patterns were used to orientate the sample.

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