Model Study on the Ideal Current–Voltage Characteristics and Rectification Performance of a Molecular Rectifier under Single-Level-Based Tunneling and Hopping Transport

2020 ◽  
Vol 124 (44) ◽  
pp. 24408-24419
Author(s):  
Xianneng Song ◽  
Xi Yu ◽  
Wenping Hu
Keyword(s):  
Hopping Transport ◽  
Single Level ◽  
Model Study ◽  
Current Voltage ◽  
Molecular Rectifier ◽  
Current Voltage Characteristics ◽  
The Ideal

Modeling and Simulations of Pd/n-ZnO Schottky Diode and its Comparison with Measurements

2009 ◽  
Vol 79-82 ◽  
pp. 1317-1320 ◽  
Author(s):  
S Faraz ◽  
Haida Noor ◽  
M. Asghar ◽  
Magnus Willander ◽  
Qamar-ul Wahab
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Depletion Region ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Recombination Current ◽  
Experimental Values ◽  
Iv Curves ◽  
The Ideal

Modeling of Pd/ZnO Schottky diode has been performed together with a set of simulations to investigate its behavior in current-voltage characteristics. The diode was first fabricated and then the simulations were performed to match the IV curves to investigate the possible defects and their states in the bandgap. The doping concentration measured by capacitance-voltage is 3.4 x 1017 cm-3. The Schottky diode is simulated at room temperature and the effective barrier height is determined from current voltage characteristics both by measurements and simulations and it was found to be 0.68eV. The ideality factor obtained from simulated results is 1.06-2.04 which indicates that the transport mechanism is thermionic. It was found that the recombination current in the depletion region is responsible for deviation of experimental values from the ideal thermionic model deployed by the simulator.

Nonlinear current-voltage characteristics of ion-implanted Si:As in the hopping transport regime

1992 ◽  
Vol 65 (4) ◽  
pp. 849-853 ◽  
Author(s):  
R. W. van der Heijden ◽  
G. Chen ◽  
A. T. A. M. De Waele ◽  
H. M. Gijsman ◽  
F. P. B. Tielen
Keyword(s):  
Hopping Transport ◽  
Transport Regime ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ion Implanted

Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse

1998 ◽  
Vol 32 (2) ◽  
pp. 174-180 ◽  
Author(s):  
B. A. Aronzon ◽  
D. Yu. Kovalev ◽  
A. M. Kozlov ◽  
J. Leotin ◽  
V. V. Ryl’kov
Keyword(s):  
Impurity Band ◽  
Band Structures ◽  
Hopping Transport ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Silicon carbide of 4H-SiC type Schottky diode current-voltage characteristics in small-sized type metal-polymeric package SOT-89

2021 ◽  
Vol 2086 (1) ◽  
pp. 012065
Author(s):  
S V Sedykh ◽  
S B Rybalka ◽  
A A Demidov ◽  
E A Kulchenkov
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Reverse Current ◽  
Forward Direction ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Ideal Diode ◽  
Diode Current ◽  
The Ideal

Abstract The forward and reverse current–voltage characteristics of Ti/Al/4H-SiC Schottky diode type DDSH411A91 in modern small-sized (SOT-89) type metal-polymeric package have been obtained. In forward direction (current up to 2 A) on the basis of analysis it is shown that Schottky diode corresponds to the "ideal" diode with ideality factor n=1.12 and effective Schottky barrier height φB =1.2 eV. It is shown that reverse current-voltage characteristics (breakdown voltage 1200 V) can be well approximated by mechanism of field dependence of barrier height lowering by the presence of the intermediate layer in the form of oxide on the 4H-SiC surface.

scholarly journals Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics

2017 ◽  
Vol 5 (1) ◽  
pp. 11
Author(s):  
S.B. Rybalka ◽  
E.Yu. Krayushkina ◽  
A.A. Demidov ◽  
O.A. Shishkina ◽  
B.P. Surin
Keyword(s):  
Schottky Diode ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Analytical Models ◽  
Drift Diffusion ◽  
Continuity Equations ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Ideal

Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n»1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.

Quantitative measurements of charge carrier hopping transport properties in depleted-heterojunction PbS colloidal quantum dot solar cells from temperature dependent current–voltage characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93180-93194 ◽  
Author(s):  
Andreas Mandelis ◽  
Lilei Hu ◽  
Jing Wang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Temperature Dependent ◽  
Hopping Transport ◽  
Quantitative Measurements ◽  
Quantum Dot Solar Cells ◽  
Current Voltage ◽  
Colloidal Quantum Dot ◽  
Current Voltage Characteristics

Non-conventional (anomalous) current–voltage characteristics are reported with increasing frequency for colloidal quantum dot-based (CQD) solar cells.

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