scholarly journals Correction to “Mg Doped-ZnO Nanoparticle Film as the Interlayer between ZnO Electron Transport Layer and InP Quantum-Dot Layer for Light-Emitting Diodes”

2020 ◽  
Vol 124 (20) ◽  
pp. 11274-11274
Author(s):  
Lishuang Wang ◽  
Jie Lin ◽  
Xingyuan Liu ◽  
Sheng Cao ◽  
Yunjun Wang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Zno Nanoparticle ◽  
Light Emitting ◽  
Doped Zno ◽  
Nanoparticle Film ◽  
Mg Doped

Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Co Doped

High Performance Top-Emission Quantum Dot Light-Emitting Diodes with Mg-Doped ZnO Nanoparticles Used as an Electron Transport Layer

2021 ◽  
Vol 21 (7) ◽  
pp. 3747-3752
Author(s):  
Bada Kim ◽  
Dohyeong Lee ◽  
Boram Hwang ◽  
Yebin Eun ◽  
Mi-Young Ha ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Maximum Luminance ◽  
Zno Nps ◽  
Light Emitting ◽  
Mg Doping ◽  
Doped Zno ◽  
Mg Doped

In this paper, we reported superior performance of solution-processed top-emission quantum dot light-emitting diodes (TE-QLEDs) with Mg-doped ZnO nanoparticle (NP) electron transport layer (ETL). The Mg-doped ZnO NPs were synthesized by the sol-gel method. Transmission electron microscopy (TEM) analysis of the Mg-doped ZnO NPs with 0 wt%, 5 wt%, 10 wt%, and 15 wt% Mg-doping concentrations revealed average diameters of 5.86 nm, 5.33 nm, 4.52 nm, and 4.37 nm, respectively. The maximum luminance, the current efficiency, and external quantum efficiency (EQE) were 178,561.8 cd/m2, 56.0 cd/A, and 14.43%, respectively. However, for the best performance of TE-QLED without Mg-doping in the ZnO NPs, the maximum luminance was only 101,523.4 cd/m2, the luminous efficiency was 27.8 cd/A, and the EQE was 6.91%. The improvement of the performance is attributed to the suppression of electron transfer by an increase in the energy barrier between the cathode and Mg-doped ZnO NP ETL and the reduction in the Hall mobility of electron with increasing the Mg-doping in the ZnO NPs, resulting in the enhanced charge balance in the quantum dot (QD) emitting layer (EML).

The Effect of Cation Doped ZnO Electron Transport Layer for Pure Blue Emitting Zntese/ZnSe/ZnS Quantum Dot Light Emitting Diodes

2021 ◽  
Vol MA2021-01 (23) ◽  
pp. 897-897
Author(s):  
Hyung Seok Choi ◽  
Yohan Kim ◽  
Jiyong Kim ◽  
André Geßner ◽  
Armin Wedel
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno

Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers

2019 ◽  
Vol 7 (32) ◽  
pp. 10082-10091 ◽  
Author(s):  
Yujin Lee ◽  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Metal Oxide ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Remarkable Improvement ◽  
Operational Lifetime ◽  
Electron Transporting Layer ◽  
Doped Zno ◽  
Mg Doped

We demonstrated the remarkable improvement of efficiency roll-off and operational lifetime in red quantum dot light emitting diodes (R-QLEDs) by incorporating rubidium carbonate (Rb2CO3) in Mg doped ZnO (MZO) electron transporting layer (ETL).

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