scholarly journals Extrinsic Doping in Group IV Hexagonal-Diamond-Type Crystals

2020 ◽  
Vol 124 (31) ◽  
pp. 17290-17298
Author(s):  
Michele Amato ◽  
Thanayut Kaewmaraya ◽  
Alberto Zobelli
Keyword(s):  
Group Iv ◽  
Hexagonal Diamond ◽  
Diamond Type

scholarly journals Crystal Structure and Bonding in BaAu5Ga2 and AeAu4+xGa3–x (Ae = Ba and Eu): Hexagonal Diamond-Type Au Frameworks and Remarkable Cation/Anion Partitioning in the Ae–Au–Ga Systems

2014 ◽  
Vol 54 (3) ◽  
pp. 1010-1018 ◽  
Author(s):  
Volodymyr Smetana ◽  
Simon Steinberg ◽  
Nathan Card ◽  
Anja-Verena Mudring ◽  
Gordon J. Miller
Keyword(s):  
Crystal Structure ◽  
Hexagonal Diamond ◽  
Structure And Bonding ◽  
Diamond Type

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

New semiconducting compounds of diamond type structure

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 1107-1109 ◽  
Author(s):  
C GOODMAN ◽  
R DOUGLAS
Keyword(s):  
Type Structure ◽  
Semiconducting Compounds ◽  
Diamond Type

ISOMER-SHIFT SYSTEMATICS OF 57Co IMPLANTED IN GROUP IV SEMICONDUCTORS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-893-C6-896 ◽  
Author(s):  
G. WEYER ◽  
G. GREBE ◽  
A. KETTSCHAU ◽  
B. I. DEUTCH ◽  
A. NYLANDSTED LARSEN ◽  
...  
Keyword(s):  
Isomer Shift ◽  
Group Iv ◽  
Group Iv Semiconductors

Anti-diabetic activity of diphenhydramine in diabetic rats

2020 ◽  
Vol 11 (4) ◽  
pp. 5067-5070
Author(s):  
Pang Jyh Chayng ◽  
Nurul Ain ◽  
Kaswandi Md Ambia ◽  
Rahim Md Noah
Keyword(s):  
Blood Glucose ◽  
Blood Glucose Level ◽  
Glucose Level ◽  
Fasting Blood Glucose ◽  
Insulin Level ◽  
Diabetic Rats ◽  
Group Iv ◽  
Diabetic Rat ◽  
Control Group ◽  
Group I

The purpose of this project is to study the anti-diabetic effect of on a diabetic rat model. A total of Twenty male Sprague rats were used and it randomly distributed into four groups which are Group I: , Group II: negative control, Group III: and Group IV: and . In diabetic model were induced with via injection at the dosage of 65mg/kg. and FBG (Fasting Blood Glucose) level of diabetic rats were assessed every three days. Blood was collected via cardiac puncture at day 21 after the induction of treatment. Insulin level of the rats was assessed with the Mercodia Rat Insulin ELISA kit. FBG level of group I (12.16 ±3.96, p<0.05) and group IV (11.34 ±3.67, p<0.05) were significantly decreased. Meanwhile, the for all rats did not show any significant increase. However, the insulin level was escalated in group IV (0.74+0.25, p<0.05) significantly. The present study shows that the and the combination of and lowered blood glucose level and enhanced insulin secretion.

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