scholarly journals Synthesis of Graphene Nanoribbons on a Kinked Au Surface: Revealing the Frontier Valence Band at the Brillouin Zone Center

2020 ◽  
Vol 124 (28) ◽  
pp. 15474-15480
Author(s):  
Afaf El-Sayed ◽  
Ignacio Piquero-Zulaica ◽  
Zakaria M. Abd El-Fattah ◽  
Lukáš Kormoš ◽  
Khadiza Ali ◽  
...  
2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Megan Stokey ◽  
Rafał Korlacki ◽  
Matthew Hilfiker ◽  
Sean Knight ◽  
Steffen Richter ◽  
...  

2020 ◽  
Vol 117 (5) ◽  
pp. 052104 ◽  
Author(s):  
Megan Stokey ◽  
Rafał Korlacki ◽  
Sean Knight ◽  
Matthew Hilfiker ◽  
Zbigniew Galazka ◽  
...  

1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.


2014 ◽  
Vol 926-930 ◽  
pp. 234-237
Author(s):  
Fu Chun Zhang ◽  
Xian Hui Zhong ◽  
Xing Xiang Ruan ◽  
Wei Hu Zhang

SiC poly-type geometric structure, electronic structure and energy have been subjected to systematic study based on first principle calculation method given in density functional theory. After calculation, the energy results show that 4H-SiC system energy is the lowest and stablest, while 2H-SiC system energy is the highest and unstablest; the calculation results of the band structure show that six SiC poly-types are indirect wide band gap semiconductor, with valence band top on point Γ of Brillouin zone, conduction band bottom on point M of Brillouin zone; with the increase of hexagonality, the energy gap and valence band width are gradually getting smaller, with largest splitting of orbital energy level on 2H-SiC valence band top, reaching to 0.122 eV, while the splitting of orbital energy level on 8H-SiC valence band top is the smallest, with 0.027 eV only.


1968 ◽  
Vol 21 (15) ◽  
pp. 1067-1070 ◽  
Author(s):  
R. E. Dietz ◽  
A. E. Meixner ◽  
H. J. Guggenheim ◽  
A. Misetich

1982 ◽  
Vol 20 ◽  
Author(s):  
R. Al-Jishi ◽  
G. Dresselhaus

ABSTRACTA Born-von Kármán lattice dynamical model for the graphite Br2 intercalation compounds is presented. The low frequency bromine branches are calculated using a commensurate (√3 × √13)R(30°, 13.9°) unit cell with two Br2 molecules/unit cell. In-plane zone folding is used to calculate the high frequency graphitic modes at the Brillouin zone center.


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