Large Performance Enhancement in All-Solution-Processed, Full-Color, Inverted Quantum-Dot Light-Emitting Diodes Using Graphene Oxide Doped Hole Injection Layer

2020 ◽  
Vol 124 (21) ◽  
pp. 11617-11624
Author(s):  
Jialin Wu ◽  
Lixiang Chen ◽  
Xingwen Tan ◽  
Qiaoming Zhang ◽  
Zuhong Xiong ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Performance Enhancement ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Full Color

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

scholarly journals Solution-processed inorganic copper(i) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26322-26327 ◽  
Author(s):  
Tao Ding ◽  
Ning Wang ◽  
Chen Wang ◽  
Xinghua Wu ◽  
Wenbo Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Turn On ◽  
Injection Material

The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.

Reduced Graphene Oxide as Efficient Hole Injection Layer for Quantum-Dot Light-Emitting Diodes

2018 ◽  
Vol 215 (23) ◽  
pp. 1800517 ◽  
Author(s):  
Dae-Ho Song ◽  
Suk-Ho Song ◽  
Tian-Zi Shen ◽  
Jun-Seo Lee ◽  
Won-Hyeok Park ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Quantum Dot ◽  
Reduced Graphene Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Reduced Graphene

scholarly journals Solution-Processed NiO as a Hole Injection Layer for Stable Quantum Dot Light-Emitting Diodes

2021 ◽  
Vol 11 (10) ◽  
pp. 4422
Author(s):  
Sangwon Lee ◽  
Youngjin Kim ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Good Alternative ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Long Term Stability ◽  
Stable Quantum ◽  
Poly Styrene Sulfonate

In this work, we fabricated quantum dot light-emitting diodes using solution-processed NiO as the hole injection layer to replace the commonly used poly(3,4-ethylenedioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS) layer. We successfully prepared NiO films by spin coating the NiO precursor, then annealing them, and then treating them with UV-ozone under optimized conditions. The best device with the NiO film shows higher current efficiency (25.1 cd/A) than that with the PEDOT:PSS layer (22.3 cd/A). Moreover, the long-term stability of the devices with NiO which is annealed at 500 °C is improved substantially. These results suggest that the NiO layer can be a good alternative for developing stable devices.

Solution-processed vanadium oxide as an efficient hole injection layer for quantum-dot light-emitting diodes

2017 ◽  
Vol 5 (4) ◽  
pp. 817-823 ◽  
Author(s):  
Heng Zhang ◽  
Siting Wang ◽  
Xiaowei Sun ◽  
Shuming Chen
Keyword(s):  
Quantum Dot ◽  
Vanadium Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
The Stability

Solution processed V2O5 is used as a replacement for PEDOT:PSS to improve the stability of QLEDs.

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