Long-Term Electrodeposition under a Uniform Parallel Magnetic Field. 1. Instability of Two-Dimensional Nucleation in an Electric Double Layer

2020 ◽  
Vol 124 (52) ◽  
pp. 11854-11869 ◽  
Author(s):  
Ryoichi Morimoto ◽  
Miki Miura ◽  
Atsushi Sugiyama ◽  
Makoto Miura ◽  
Yoshinobu Oshikiri ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Double Layer ◽  
Electric Double Layer ◽  
Two Dimensional ◽  
Parallel Magnetic Field

Long-Term Electrodeposition under a Uniform Parallel Magnetic Field. 2. Flow-Mode Transition from Laminar MHD Flow to Convection Cells with Two-Dimensional (2D) Nucleation

2020 ◽  
Vol 124 (52) ◽  
pp. 11870-11881
Author(s):  
Ryoichi Morimoto ◽  
Miki Miura ◽  
Atsushi Sugiyama ◽  
Makoto Miura ◽  
Yoshinobu Oshikiri ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Mhd Flow ◽  
Flow Mode ◽  
Mode Transition ◽  
Two Dimensional ◽  
Parallel Magnetic Field

scholarly journals Insights into the electric double-layer capacitance of two-dimensional electrically conductive metal-organic frameworks

2021 ◽  
Author(s):  
Jamie W. Gittins ◽  
Chloe J. Balhatchet ◽  
Yuan Chen ◽  
Cheng Liu ◽  
David G. Madden ◽  
...  
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Electrode Materials ◽  
Metal Organic Frameworks ◽  
Significant Finding ◽  
Two Dimensional ◽  
Electrically Conductive ◽  
Capacitive Performance ◽  
Metal Organic ◽  
Organic Linker

Two-dimensional electrically conductive metal-organic frameworks (MOFs) have emerged as promising model electrodes for use in electric double-layer capacitors (EDLCs). However, a number of fundamental questions about the behaviour of this class of materials in EDLCs remain unanswered, including the effect of the identity of the metal node and organic linker molecule on capacitive performance and the limitations of current conductive MOFs in these devices relative to traditional activated carbon electrode materials. Herein, we address both these questions via a detailed study of the capacitive performance of the framework Cu<sub>3</sub>(HHTP)<sub>2</sub> (HHTP = 2,3,6,7,10,11-hexahydroxytriphenylene) with an acetonitrile-based electrolyte, finding a specific capacitance of 110 – 114 F g<sup>−1</sup> at current densities of 0.04 – 0.05 A g<sup>−1</sup> and a modest rate capability. By, directly comparing its performance with the previously reported analogue, Ni<sub>3</sub>(HITP)<sub>2</sub> (HITP = 2,3,6,7,10,11-hexaiminotriphenylene), we illustrate that capacitive performance is largely independent of the identity of the metal node and organic linker molecule in these nearly isostructural MOFs. Importantly, this result suggests that EDLC performance in general is uniquely defined by the 3D structure of the electrodes and the electrolyte, a significant finding not demonstrated using traditional electrode materials. Finally, we probe the limitations of Cu<sub>3</sub>(HHTP)<sub>2</sub> in EDLCs, finding a limited cell voltage window of 1.3 V and only a modest capacitance retention of 81 % over 30,000 cycles, both significantly lower than state-of-the-art porous carbons. These important insights will aid the design of future conductive MOFs with greater EDLC performances.

scholarly journals Two-dimensional electric-double-layer Esaki diode

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Paolo Paletti ◽  
Ruoyu Yue ◽  
Christopher Hinkle ◽  
Susan K. Fullerton-Shirey ◽  
Alan Seabaugh
Keyword(s):  
Double Layer ◽  
Electric Double Layer ◽  
Two Dimensional ◽  
Esaki Diode

scholarly journals Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 645 ◽  
Author(s):  
Prasanna D. Patil ◽  
Sujoy Ghosh ◽  
Milinda Wasala ◽  
Sidong Lei ◽  
Robert Vajtai ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Power ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Two Dimensional ◽  
Copper Indium

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.

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