Information Functional Theory: Electronic Properties as Functionals of Information for Atoms and Molecules

2016 ◽  
Vol 120 (20) ◽  
pp. 3634-3642 ◽  
Author(s):  
Xia-Yu Zhou ◽  
Chunying Rong ◽  
Tian Lu ◽  
Panpan Zhou ◽  
Shubin Liu
Keyword(s):  
Electronic Properties ◽  
Functional Theory ◽  
Atoms And Molecules ◽  
Information Functional

scholarly journals Defect Processes in Halogen Doped SnO2

2021 ◽  
Vol 11 (2) ◽  
pp. 551
Author(s):  
Petros-Panagis Filippatos ◽  
Nikolaos Kelaidis ◽  
Maria Vasilopoulou ◽  
Dimitris Davazoglou ◽  
Alexander Chroneos
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Density Functional ◽  
Structural Changes ◽  
High Dielectric Constant ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Optical And Electronic Properties ◽  
High Dielectric ◽  
Gap States

In the present study, we performed density functional theory calculations (DFT) to investigate structural changes and their impact on the electronic properties in halogen (F, Cl, Br, and I) doped tin oxide (SnO2). We performed calculations for atoms intercalated either at interstitial or substitutional positions and then calculated the electronic structure and the optical properties of the doped SnO2. In all cases, a reduction in the bandgap value was evident, while gap states were also formed. Furthermore, when we insert these dopants in interstitial and substitutional positions, they all constitute a single acceptor and donor, respectively. This can also be seen in the density of states through the formation of gap states just above the valence band or below the conduction band, respectively. These gap states may contribute to significant changes in the optical and electronic properties of SnO2, thus affecting the metal oxide’s suitability for photovoltaics and photocatalytic devices. In particular, we found that iodine (I) doping of SnO2 induces a high dielectric constant while also reducing the oxide’s bandgap, making it more efficient for light-harvesting applications.

Geometric, electronic properties of Au$_l$Pt$_m$ ($l$+$m$$\leqslant$10) clusters: A first-principles study

2021 ◽  
Author(s):  
Wei-Feng Xie ◽  
Hao-Ran Zhu ◽  
Shi-Hao Wei
Keyword(s):  
Density Functional Theory ◽  
Electronic Properties ◽  
First Principles ◽  
Density Functional ◽  
Inverse Design ◽  
Functional Theory ◽  
First Principles Study

The structural evolutions and electronic properties of Au$_l$Pt$_m$ ($l$+$m$$\leqslant$10) clusters are investigated by using the first$-$principles methods based on density functional theory (DFT). We use Inverse design of materials by...

scholarly journals Tuning Bandgaps of Mixed Halide and Oxide Perovskites CsSnX3 (X=Cl, I), and SrBO3 (B=Rh, Ti)

2021 ◽  
Vol 11 (15) ◽  
pp. 6862
Author(s):  
Hongzhe Wen ◽  
Xuan Luo
Keyword(s):  
Solar Energy ◽  
Electronic Properties ◽  
Density Functional ◽  
Photovoltaic Cell ◽  
Photovoltaic Properties ◽  
Functional Theory ◽  
New Approach ◽  
Energy Applications ◽  
Valence Bands ◽  
The Ideal

Perovskites have recently attracted interest in the field of solar energy due to their excellent photovoltaic properties. We herein present a new approach to the composition of lead free perovskites via mixing of halide and oxide perovskites that share the cubic ABX3 structure. Using first-principles calculations through Density Functional Theory, we systematically investigated the atomic and electronic structures of mixed perovskite compounds composed of four cubic ABX3 perovskites. Our result shows that the B and X atoms play important roles in their band structure. On the other hand, their valence bands contributed by O-2p, Rh-4p, and Ti-3p orbitals, and their electronic properties were determined by Rh-O and Ti-O bonds. With new understandings of the electronic properties of cubic halide or oxide perovskites, we lastly combined the cubic perovskites in various configurations to improve stability and tune the bandgap to values desirable for photovoltaic cell applications. Our investigations suggest that the mixed perovskite compound Cs2Sn2Cl3I3Sr2TiRhO6 produced a bandgap of 1.2 eV, which falls into the ideal range of 1.0 to 1.7 eV, indicating high photo-conversion efficiency and showing promise towards solar energy applications.

scholarly journals Intercalated architecture of MA2Z4 family layered van der Waals materials with emerging topological, magnetic and superconducting properties

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Lei Wang ◽  
Yongpeng Shi ◽  
Mingfeng Liu ◽  
Ao Zhang ◽  
Yi-Lun Hong ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Layer Structure ◽  
Atomic Layer ◽  
Type I ◽  
Hybrid Functional ◽  
Functional Theory ◽  
Valence Electrons ◽  
Nonmagnetic Metals ◽  
Standard Density

AbstractThe search for new two-dimensional monolayers with diverse electronic properties has attracted growing interest in recent years. Here, we present an approach to construct MA2Z4 monolayers with a septuple-atomic-layer structure, that is, intercalating a MoS2-type monolayer MZ2 into an InSe-type monolayer A2Z2. We illustrate this unique strategy by means of first-principles calculations, which not only reproduce the structures of MoSi2N4 and MnBi2Te4 that were already experimentally synthesized, but also predict 72 compounds that are thermodynamically and dynamically stable. Such an intercalated architecture significantly reconstructs the band structures of the constituents MZ2 and A2Z2, leading to diverse electronic properties for MA2Z4, which can be classified according to the total number of valence electrons. The systems with 32 and 34 valence electrons are mostly semiconductors. Whereas, those with 33 valence electrons can be nonmagnetic metals or ferromagnetic semiconductors. In particular, we find that, among the predicted compounds, (Ca,Sr)Ga2Te4 are topologically nontrivial by both the standard density functional theory and hybrid functional calculations. While VSi2P4 is a ferromagnetic semiconductor and TaSi2N4 is a type-I Ising superconductor. Moreover, WSi2P4 is a direct gap semiconductor with peculiar spin-valley properties, which are robust against interlayer interactions. Our study thus provides an effective way of designing septuple-atomic-layer MA2Z4 with unusual electronic properties to draw immediate experimental interest.

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