Effect of Holding Temperature on Growth of Ruby Crystal Films via Molybdenum Trioxide Flux Evaporation–Solubility of Aluminum Oxide, Growth Rate, and Material Balance

2020 ◽  
Vol 20 (3) ◽  
pp. 2019-2026 ◽  
Author(s):  
Shunsuke Ayuzawa ◽  
Sayaka Suzuki ◽  
Miki Hidaka ◽  
Shuji Oishi ◽  
Katsuya Teshima
Keyword(s):  
Growth Rate ◽  
Aluminum Oxide ◽  
Molybdenum Trioxide ◽  
Material Balance ◽  
Oxide Growth ◽  
Flux Evaporation ◽  
Crystal Films ◽  
Holding Temperature

Epitaxial Growth of Ruby Crystal Films on Sapphire Crystal Substrates and Solubility of Aluminum Oxide in Molybdenum Trioxide Flux

2019 ◽  
Vol 19 (7) ◽  
pp. 4095-4100 ◽  
Author(s):  
Shunsuke Ayuzawa ◽  
Sayaka Suzuki ◽  
Miki Hidaka ◽  
Shuji Oishi ◽  
Katsuya Teshima
Keyword(s):  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molybdenum Trioxide ◽  
Sapphire Crystal ◽  
Crystal Films

scholarly journals Influence of the anodization conditions and chemical treatment on the formation of alumina membranes with defined pore diameters

2021 ◽  
Author(s):  
Iwona Dobosz
Keyword(s):  
Aluminum Oxide ◽  
Chemical Treatment ◽  
Anodic Aluminum Oxide ◽  
Pore Diameter ◽  
Operating Conditions ◽  
Oxide Growth ◽  
Pore Density ◽  
Anodic Aluminum ◽  
Pore Widening ◽  
Oxide Membranes

AbstractPorous anodic aluminum oxide membranes were fabricated via two-step anodization of aluminum in 0.3 M H2C2O4, 0.3 M H2SO4 and 0.17 M H3PO4 solutions. The parameters of the oxide film such as: pore diameter (Dp), interpore distance (Dc), porosity (P) and pore density (ρ) can be completely controlled by the operating conditions of the anodization. Additionally, the pore diameters and pore density can be controlled via a chemical treatment (pore opening/widening process). The effect of anodizing conditions such as the applied voltage, type of electrolyte and purity of the substrate on the rate of porous oxide growth are discussed. The obtained results were compared with the theoretical predictions and data that has been reported in the literature. The influence of the duration of chemical etching on the structural features of the oxide membranes was studied. On the based on qualitative and quantitative FFT analyzes and circularity maps, it was found that the nanostructures of anodized aluminum have the maximum order under certain specified conditions. The presence of alloying elements affects not only the rate of oxide growth but also the morphology of the anodic aluminum oxide. The rate of oxide growth depends on the electrolyte type and temperature. During chemical treatment of the oxide films pore diameter increases with the pore widening time and the highest pore widening was observed in phosphoric acid solution.

Easy preparation of anodic aluminum oxide photonic crystal films with tunable structural colors

2021 ◽  
Vol 122 ◽  
pp. 111722
Author(s):  
Hongyang Wei ◽  
Qing Xu ◽  
Dongchu Chen ◽  
Min Chen ◽  
Menglei Chang ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Aluminum Oxide ◽  
Anodic Aluminum Oxide ◽  
Structural Colors ◽  
Anodic Aluminum ◽  
Crystal Films

Growth Kinetics of Salmonella Isolates in a Laboratory Medium as Affected by Isolate and Holding Temperature†

1998 ◽  
Vol 61 (8) ◽  
pp. 964-968 ◽  
Author(s):  
THOMAS P. OSCAR
Keyword(s):  
Growth Rate ◽  
Stationary Phase ◽  
Growth Kinetics ◽  
Brain Heart Infusion ◽  
Lag Time ◽  
Culture Collection ◽  
Subsequent Growth ◽  
Laboratory Medium ◽  
Different Temperatures ◽  
Holding Temperature

Salmonella isolates were surveyed for their growth kinetics in a laboratory medium for the purpose of identifying isolates suitable for modeling experiments. In addition, the effect of holding stationary phase Salmonella cultures at different temperatures on their subsequent growth kinetics was evaluated for the purpose of developing a protocol to prevent the need for midnight sampling in modeling experiments. In Experiment 1, 16 isolates of Salmonella, 2 from the American Type Culture Collection (ATCC) and 14 from broiler operations, were surveyed for their growth kinetics in brain heart infusion (BHI) broth at 40°C. Lag time (P = 0.005) and growth rate (P = 0.022) were affected by identity of the isolate. Lag time ranged from 0.73 to 1.38 h, whereas growth rate ranged from 0.78 to 0.94 log10 CFU/ml/h. Overall, isolate S1 (Salmonella infantis from ATCC) was the fastest growing. In Experiment 2, 4 isolates of Salmonella, 1 from ATCC and 3 from broiler operations, were used to determine whether holding temperature influences subsequent growth kinetics. Salmonella isolates were grown to stationary phase at 37°C in BHI and then held for 24 h at 5, 22, or 37°C before dilution and reinitiation of growth in BHI at 37°C. Holding temperature did not alter or interact with identity of the isolate to alter subsequent growth kinetics. From the latter finding, a protocol was devised in which a dual-flask system is used to prevent the need for midnight sampling in modeling experiments. Similar to the results obtained in Experiment 1, identity of the isolate had only minor effects on growth kinetics in Experiment 2 indicating that all isolates examined were suitable for modeling experiments.

Angular Dependences of Transmission Spectra of Photonic-Crystal Films Based on Aluminum Oxide

2019 ◽  
Vol 127 (4) ◽  
pp. 602-604 ◽  
Author(s):  
P. P. Sverbil ◽  
V. S. Gorelik ◽  
Dongxue Bi ◽  
Guang Tao Fei ◽  
Shao Hui Xu ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Aluminum Oxide ◽  
Transmission Spectra ◽  
Crystal Films

In Situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures

2010 ◽  
Vol 645-648 ◽  
pp. 813-816 ◽  
Author(s):  
Keiko Kouda ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida
Keyword(s):  
Growth Rate ◽  
Spectroscopic Ellipsometry ◽  
Reaction Rate ◽  
Oxidation Process ◽  
Early Stage ◽  
Oxide Thickness ◽  
Oxide Growth ◽  
Low Oxygen ◽  
Partial Pressures

We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen　partial　pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.

scholarly journals H2O Dissociation-Induced Aluminum Oxide Growth on Oxidized Al(111) Surfaces

Langmuir ◽  
2015 ◽  
Vol 31 (48) ◽  
pp. 13117-13126 ◽  
Author(s):  
Qianqian Liu ◽  
Xiao Tong ◽  
Guangwen Zhou
Keyword(s):  
Aluminum Oxide ◽  
Oxide Growth

Effects and Applications of Multiple-Gas Rta Treatment on Ti-Based Metallization for Future Dram Devices

1995 ◽  
Vol 387 ◽  
Author(s):  
John M. Drynan ◽  
Kuniaki Koyama
Keyword(s):  
Growth Rate ◽  
Polycrystalline Silicon ◽  
Memory Cell ◽  
Rutile Phase ◽  
Oxide Growth ◽  
Etch Stop ◽  
Ambient Gases ◽  
Ar Gas ◽  
Film Characteristics ◽  
N Compounds

AbstractThe effects of N2, O2, and Ar gas RTA treatments on Ti, TiN, and Ti-polycide film characteristics have been investigated in anticipation of the trend in DRAM development toward lower resistance materials to replace the standard WSi2, WSi2 on doped polycrystalline silicon (W-polycide), and doped polysilicon conductors used in interconnections, transistor gates, and contact-hole plugs, respectively. The reactivities of Ti and TiN in N2 and O2 gases are markedly different. Film characteristics such as sheet resistance, crystallinity, and elemental composition remain unchanged for TiN RTA-treated in N2 but vary significantly for Ti. In the case of Ti, XRD and XPS data indicate the formation of intermediate Ti-rich TiN or Ti2N compounds prior to the final TiN phase. Similarly, RTO-treated TiN shows a slower oxide growth rate compared with that of Ti. In the case of TiN, a surface layer of rutile phase TiO2 is directly formed, whereas for Ti the data suggest the formation of Ti-rich oxides such as Ti2O or TiO prior to the final TiO2 rutile phase. RTA treatment in different ambient gases can be used to create multilayer Ti-polycide and TiN/Ti metallization with self-aligned TiO2 passivation and etch-stop layers. TiN can also be applied with other materials and processes to form new DRAM memory cell capacitor structures.

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