Insight into the Interfacial Nucleation and Competitive Growth of YBa2Cu3O7−δ Films as High-Performance Coated Conductors by a Fluorine-Free Metal–Organic Decomposition Route

2019 ◽  
Vol 19 (11) ◽  
pp. 6752-6762 ◽  
Author(s):  
Jingyuan Chu ◽  
Yue Zhao ◽  
Mukarram Z. Khan ◽  
Xiao Tang ◽  
Wei Wu ◽  
...  
Keyword(s):  
High Performance ◽  
Coated Conductors ◽  
Competitive Growth ◽  
Metal Organic ◽  
Free Metal ◽  
Insight Into ◽  
Organic Decomposition

Greatly enhanced flux pinning properties of fluorine-free metal–organic decomposition YBCO films by co-addition of halogens (Cl, Br) and metals (Zr, Sn, Hf)

2018 ◽  
Vol 31 (4) ◽  
pp. 044004 ◽  
Author(s):  
Takanori Motoki ◽  
Shuhei Ikeda ◽  
Shin-ichi Nakamura ◽  
Genki Honda ◽  
Tatsuoki Nagaishi ◽  
...  
Keyword(s):  
Flux Pinning ◽  
Ybco Films ◽  
Metal Organic ◽  
Co Addition ◽  
Pinning Properties ◽  
Free Metal ◽  
Organic Decomposition

Pyrolysis behaviors dominated by the reaction–diffusion mechanism in the fluorine-free metal–organic decomposition process

2020 ◽  
Vol 8 (48) ◽  
pp. 17417-17428
Author(s):  
Jiangtao Shi ◽  
Yue Zhao ◽  
Yue Wu ◽  
Jingyuan Chu ◽  
Xiao Tang ◽  
...  
Keyword(s):  
Diffusion Model ◽  
Diffusion Mechanism ◽  
Reaction Diffusion ◽  
Decomposition Process ◽  
One Dimensional ◽  
Reaction Diffusion Model ◽  
Metal Organic ◽  
Free Metal ◽  
Organic Decomposition

In this work, pyrolysis behaviors dominated by the reaction–diffusion mechanism were investigated. And one-dimensional reaction–diffusion model is proposed.

Dramatic effects of chlorine addition on expanding synthesis conditions for fluorine-free metal–organic decomposition YBa2Cu3Oyfilms

2017 ◽  
Vol 10 (2) ◽  
pp. 023102 ◽  
Author(s):  
Takanori Motoki ◽  
Shuhei Ikeda ◽  
Genki Honda ◽  
Tatsuoki Nagaishi ◽  
Shin-ichi Nakamura ◽  
...  
Keyword(s):  
Synthesis Conditions ◽  
Metal Organic ◽  
Free Metal ◽  
Organic Decomposition

scholarly journals High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Yingtao Xie ◽  
Dongping Wang ◽  
Hon Hang Fong
Keyword(s):  
High Performance ◽  
Annealing Temperature ◽  
Solution Process ◽  
Molar Ratio ◽  
Molar Ratios ◽  
Positive Voltage ◽  
Metal Organic ◽  
The Relationship ◽  
Organic Decomposition ◽  
Igzo Tft

A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD) method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O2)3], zinc acetylacetonate hydrate [Zn(C5H7O2)2·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O2)3] dissolved in tetrahydrofuran (THF). The deposited films by spin-coating were annealed at moderate process temperature (≤500°C). The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities (μe) decreased and VTH shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH. As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.

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