Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy

2020 ◽  
Vol 20 (3) ◽  
pp. 1415-1421 ◽  
Author(s):  
Ashraful G. Bhuiyan ◽  
Daiki Ishimaru ◽  
Akihiro Hashimoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Epitaxial Graphene ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Improvements of ZnO Qualities Grown by Metal-Organic Vapor Phase Epitaxy Using a Molecular Beam Epitaxy Grown ZnO Layer as a Substrate

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L657-L659 ◽  
Author(s):  
Ken-ichi Ogata ◽  
Toru Kawanishi ◽  
Keigou Maejima ◽  
Keiichiro Sakurai ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy

2010 ◽  
Vol 312 (3) ◽  
pp. 368-372 ◽  
Author(s):  
Masataka Imura ◽  
Kiyomi Nakajima ◽  
Meiyong Liao ◽  
Yasuo Koide ◽  
Hiroshi Amano
Keyword(s):  
Vapor Phase ◽  
Growth Mechanism ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

SPA Monitoring of GaN Movpe Surface

1997 ◽  
Vol 502 ◽  
Author(s):  
Naoki Kobayashi ◽  
Yasuyuki Kobayashi
Keyword(s):  
Substrate Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Desorption Kinetics ◽  
Carrier Gas ◽  
Organic Vapor ◽  
Metal Organic

ABSTRACTFor the purpose of clarifying the growth mechanism of GaN metal-organic vapor phase epitaxy (MOVPE), the GaN surface during the growth on the (0001) sapphire substrate were in-situ monitored by surface photo-absorption (SPA) method. Ga-rich and N-rich surfaces can be distinguished by their reflectivities. It is found that the surface stoichiometry changes with the substrate temperature and with the carrier gas. In the nitrogen carrier gas, a N-rich GaN surface is stably formed at temperatures up to about 1000°C under NH3 flow. In contrast, the surface in H2 carrier gas is N-rich below 720°C, but becomes Ga-rich above 850°C. The desorption kinetics indicates that H2 enhances the N desorption.

Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy

2010 ◽  
Vol 312 (8) ◽  
pp. 1325-1328 ◽  
Author(s):  
Masataka Imura ◽  
Kiyomi Nakajima ◽  
Meiyong Liao ◽  
Yasuo Koide ◽  
Hiroshi Amano
Keyword(s):  
Vapor Phase ◽  
Growth Mechanism ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Molecular Beam ◽  
High Quality ◽  
Time Resolved ◽  
Optical Amplification ◽  
Organic Vapor ◽  
Metal Organic ◽  
Time Resolved Photoluminescence

AbstractWe comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

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