scholarly journals Direct Atomic Simulations of Facet Formation and Equilibrium Shapes of SiC Nanoparticles

2020 ◽  
Vol 20 (4) ◽  
pp. 2147-2152
Author(s):  
Henrik Andersen Sveinsson ◽  
Anders Hafreager ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
Priya Vashishta ◽  
...  
Keyword(s):  
Sic Nanoparticles ◽  
Equilibrium Shapes ◽  
Atomic Simulations ◽  
Facet Formation

scholarly journals Cellular Automaton Modeling of Silicon Facet Formation during Directional Solidification

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 399
Author(s):  
Jia Wang ◽  
Ri Li ◽  
Ning Li ◽  
Wenbo Yan ◽  
Wang Ma ◽  
...  
Keyword(s):  
Cellular Automaton ◽  
Directional Solidification ◽  
Interfacial Energy ◽  
Model Simulation ◽  
Negative Temperature ◽  
In Situ Observation ◽  
Heat Accumulation ◽  
Equilibrium Shapes ◽  
Facet Formation

Silicon facet formation during directional solidification is simulated by cellular automaton (CA) modeling in which anisotropic interfacial energy and kinetics are considered. Numerical simulations were performed with different anisotropy strengths of interfacial energy and they show good agreement with analytical equilibrium shapes obtained by the Gibbs-Thomson equation. We also compare our results of anisotropic kinetics with in situ observation experiments and the results of the phase model to verify the accuracy of our model. Simulation results of facet formation show that perturbation is promoted to the corner by the negative temperature gradient of the interface and the heat accumulation location leads to the disappearance of small corners.

scholarly journals Study on the synthesis of β-SiC nanoparticles from diamond-wire silicon cutting waste

RSC Advances ◽  
2019 ◽  
Vol 9 (41) ◽  
pp. 23785-23790 ◽  
Author(s):  
Shengnan Jiang ◽  
Shuaibo Gao ◽  
Jian Kong ◽  
Xing Jin ◽  
Donghui Wei ◽  
...  
Keyword(s):  
Carbon Source ◽  
Sic Nanoparticles ◽  
Diamond Wire ◽  
Silicon Source

β-SiC nanoparticles was synthesized using silicon cutting waste (SCW) as silicon source and sucrose as carbon source.

Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

1998 ◽  
Vol 533 ◽  
Author(s):  
O. Leifeld ◽  
D. Grützmacher ◽  
B. Müller ◽  
K. Kern
Keyword(s):  
Surface Roughness ◽  
Critical Thickness ◽  
Carbon Deposition ◽  
Compressive Strain ◽  
Second Step ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Island Nucleation ◽  
Facet Formation

AbstractThe morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4×4)-reconstruction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2×1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2×1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show { 105 }- facets well known from Ge-clusters on bare Si(001) (2×1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

Supercapacitor Electrodes Made of Exhausted Activated Carbon-Derived SiC Nanoparticles Coated by Graphene

2016 ◽  
Vol 55 (20) ◽  
pp. 6025-6035 ◽  
Author(s):  
Maria Sarno ◽  
Sergio Galvagno ◽  
Rosangela Piscitelli ◽  
Sabrina Portofino ◽  
Paolo Ciambelli
Keyword(s):  
Activated Carbon ◽  
Sic Nanoparticles

Equilibrium shapes of microparacrystals in chain hydrocarbons and ammonia catalysts

Polymer ◽  
1979 ◽  
Vol 20 (9) ◽  
pp. 1091-1094 ◽  
Author(s):  
R. Hosemann ◽  
F.J. Baltá-Calleja
Keyword(s):  
Equilibrium Shapes
Sign in / Sign up

Export Citation Format

Share Document