Growth Model of a GaN Nanorod with the Pulsed-Growth Technique of Metalorganic Chemical Vapor Deposition

2018 ◽  
Vol 18 (7) ◽  
pp. 3767-3773 ◽  
Author(s):  
Xu Zhang ◽  
Shaobo Yang ◽  
Charng-Gan Tu ◽  
Yean-Woei Kiang ◽  
C. C. Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Model ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Technique ◽  
Metalorganic Chemical

Monitoring of indium x-ray peak to optimize InxGa1-xN layer grown by metalorganic chemical vapor deposition

1996 ◽  
Vol 449 ◽  
Author(s):  
Hongqiang Lu ◽  
Malathi Thothathiri ◽  
Ziming Wu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Quantitative Measure ◽  
Chemical Vapor ◽  
Droplet Formation ◽  
X Ray Diffraction ◽  
Growth Technique ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTIndium droplet formation during the epitaxial growth of InxGa1-xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the InxGa1-xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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