Unveiling the Growth Mechanism of MoS2 with Chemical Vapor Deposition: From Two-Dimensional Planar Nucleation to Self-Seeding Nucleation

2018 ◽  
Vol 18 (2) ◽  
pp. 1012-1019 ◽  
Author(s):  
Dong Zhou ◽  
Haibo Shu ◽  
Chenli Hu ◽  
Li Jiang ◽  
Pei Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional

Plasma-Enhanced Chemical Vapor Deposition of Two-Dimensional Materials for Applications

2021 ◽  
Vol 54 (4) ◽  
pp. 1011-1022
Author(s):  
Kongyang Yi ◽  
Donghua Liu ◽  
Xiaosong Chen ◽  
Jun Yang ◽  
Dapeng Wei ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Two Dimensional Materials

Growth Mechanism of YBa2Cu4O8(124) Phase in Metalorganic Chemical Vapor Deposition Film

1991 ◽  
Vol 30 (Part 2, No. 4B) ◽  
pp. L725-L727 ◽  
Author(s):  
Harumi Hayashi ◽  
Yasuji Yamada ◽  
Tsunemi Sugimoto ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Preparation and growth mechanism of one-dimensional NdB6 nanostructures: nanobelts, nanoawls, and nanotubes

RSC Advances ◽  
2016 ◽  
Vol 6 (48) ◽  
pp. 41891-41896 ◽  
Author(s):  
Wei Han ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Qidong Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
One Dimensional

1D NdB6 nanostructures (nanobelts, nanoawls, and nanotubes) have been synthesized through a chemical vapor deposition (CVD) process with a self-catalyzed mechanism.

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

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