Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux

2017 ◽  
Vol 17 (9) ◽  
pp. 4932-4935 ◽  
Author(s):  
Song Liu ◽  
Rui He ◽  
Zhipeng Ye ◽  
Xiaozhang Du ◽  
Jingyu Lin ◽  
...  
Nano Letters ◽  
2012 ◽  
Vol 12 (2) ◽  
pp. 714-718 ◽  
Author(s):  
Kang Hyuck Lee ◽  
Hyeon-Jin Shin ◽  
Jinyeong Lee ◽  
In-yeal Lee ◽  
Gil-Ho Kim ◽  
...  

Nano Letters ◽  
2010 ◽  
Vol 10 (8) ◽  
pp. 3209-3215 ◽  
Author(s):  
Li Song ◽  
Lijie Ci ◽  
Hao Lu ◽  
Pavel B. Sorokin ◽  
Chuanhong Jin ◽  
...  

RSC Advances ◽  
2019 ◽  
Vol 9 (18) ◽  
pp. 10155-10158 ◽  
Author(s):  
Zhiyuan Shi ◽  
Guangyuan Lu ◽  
Peng Yang ◽  
Tianru Wu ◽  
Weijun Yin ◽  
...  

CVD growth of large scale and high quality multilayer h-BN.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 222
Author(s):  
Pervaiz Ahmad ◽  
Mayeen Uddin Khandaker ◽  
Fida Rehman ◽  
Nawshad Muhammad ◽  
Mohammad Rashed Iqbal Faruque ◽  
...  

The interesting properties of hexagonal boron nitride (h-BN) and its potential uses in thermo-structural advanced applications have been limited or restricted by its inherent brittleness, which can easily be eliminated by its fibers (h-BN) in nanoscale dimensions. The current study is based on the synthesis of nanoscale 10B-enriched fibers of h-BN (10BNNFs) from 10B in the precursors instead of B in two-hour annealing at 900 °C and one-hour growth at 1000 °C. All of the 10BNNFs are randomly curved and highly condensed or filled from 10h-BN species with no internal space or crack. XRD peaks reported the 10h-BN phase and highly crystalline nature of the synthesized 10BNNFs. 10h-BN phase and crystalline nature of 10BNNFs are confirmed from high-intensity peaks at 1392 (cm−1) in Raman and FTIR spectroscopes.


2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...


2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Philipp Bolz ◽  
Philipp Drechsel ◽  
Alexey Prosvetov ◽  
Pascal Simon ◽  
Christina Trautmann ◽  
...  

Targets of isotropic graphite and hexagonal boron nitride were exposed to short pulses of uranium ions with ∼1 GeV kinetic energy. The deposited power density of ∼3 MW/cm³ generates thermal stress in the samples leading to pressure waves. The velocity of the respective motion of the target surface was measured by laser Doppler vibrometry. The bending modes are identified as the dominant components in the velocity signal recorded as a function of time. With accumulated radiation damage, the bending mode frequency shifts towards higher values. Based on this shift, Young’s modulus of irradiated isotropic graphite is determined by comparison with ANSYS simulations. The increase of Young’s modulus up to 3 times the pristine value for the highest accumulated fluence of 3 × 1013 ions/cm2 is attributed to the beam-induced microstructural evolution into a disordered structure similar to glassy carbon. Young’s modulus values deduced from microindentation measurements are similar, confirming the validity of the method. Beam-induced stress waves remain in the elastic regime, and no large-scale damage can be observed in graphite. Hexagonal boron nitride shows lower radiation resistance. Circular cracks are generated already at low fluences, risking material failure when applied in high-dose environment.


2019 ◽  
Vol 100 (15) ◽  
Author(s):  
Brian Shevitski ◽  
S. Matt Gilbert ◽  
Christopher T. Chen ◽  
Christoph Kastl ◽  
Edward S. Barnard ◽  
...  

2019 ◽  
Vol 7 (46) ◽  
pp. 14701-14708 ◽  
Author(s):  
Zhi-lin Cheng ◽  
Zhan-sheng Ma ◽  
Hong-liang Ding ◽  
Zan Liu

A novel approach to exfoliate BNNSs on a large scale via multi-time thermal expansion is described.


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