Conversion Behavior of Threading Screw Dislocations on C Face with Different Surface Morphology During 4H-SiC Solution Growth

2016 ◽  
Vol 16 (11) ◽  
pp. 6436-6439 ◽  
Author(s):  
Shiyu Xiao ◽  
Shunta Harada ◽  
Kenta Murayama ◽  
Miho Tagawa ◽  
Toru Ujihara
Keyword(s):  
Surface Morphology ◽  
Solution Growth ◽  
Screw Dislocations

High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

2012 ◽  
Vol 5 (11) ◽  
pp. 115501 ◽  
Author(s):  
Yuji Yamamoto ◽  
Shunta Harada ◽  
Kazuaki Seki ◽  
Atsushi Horio ◽  
Takato Mitsuhashi ◽  
...  
Keyword(s):  
High Efficiency ◽  
Solution Growth ◽  
Screw Dislocations ◽  
Efficiency Conversion

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

2005 ◽  
Vol 483-485 ◽  
pp. 93-96 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Satoshi Kuroda ◽  
Kazuo Arai ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spiral Growth ◽  
Layer Surface ◽  
Screw Dislocations ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Cvd Method

Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate.

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth

2013 ◽  
Vol 740-742 ◽  
pp. 15-18 ◽  
Author(s):  
Yuji Yamamoto ◽  
S. Harada ◽  
Kazuaki Seki ◽  
Atsushi Horio ◽  
Takato Mitsuhashi ◽  
...  
Keyword(s):  
Grown Crystal ◽  
The Other ◽  
Solution Growth ◽  
Threading Dislocations ◽  
Surface Polarity ◽  
Screw Dislocations ◽  
X Ray ◽  
Almost All ◽  
Edge Dislocations ◽  
Effect Of Surface

We investigated the dislocation behaviors during the solution growth on Si-face and C-face off-axis 4H-SiC seed crystals by using synchrotron X-ray topography. On Si-face, almost all threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are converted into Frank-type defects and basal plane dislocations (BPDs), respectively. On the other hand, on C-face, TSDs were hardly converted. Some of TEDs were converted to BPDs and BPD-TED reconversion was often occurred. Therefore, to reduce density of threading dislocations in the grown crystal, it is better to use Si-face off-axis seed crystal.

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation

2017 ◽  
Vol 897 ◽  
pp. 24-27 ◽  
Author(s):  
Kenta Murayama ◽  
Tsukasa Hori ◽  
S. Harada ◽  
S. Xiao ◽  
M. Tagawa ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Growth Temperature ◽  
Thick Layer ◽  
High Growth ◽  
Solution Growth ◽  
Threading Dislocation ◽  
Low Density ◽  
Screw Dislocations ◽  
Threading Dislocation Density ◽  
Polytype Transformation

In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transformation, is frequently induced because a density of threading screw dislocations acting as a source of spiral step decreases and wide terraces form by step bunching as growth proceeds. Therefore, it is very difficult to stabilize the polytype of crystals grown with extremely low density of threading screw dislocations. In this study, we tried to overcome these problems by using specially designed seed crystal and optimizing growth temperature and temperature distribution. We successfully grew thick low-threading-dislocation density SiC crystal without polytype transformation under the condition of high growth temperature and homogeneous temperature distribution.

Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

2017 ◽  
Vol 458 ◽  
pp. 37-43 ◽  
Author(s):  
Naoyoshi Komatsu ◽  
Takeshi Mitani ◽  
Yuichiro Hayashi ◽  
Tomohisa Kato ◽  
Shunta Harada ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Solution Growth ◽  
Modification Of The Surface

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth

2017 ◽  
Vol 897 ◽  
pp. 28-31
Author(s):  
Tsukasa Hori ◽  
Kenta Murayama ◽  
S. Harada ◽  
S. Xiao ◽  
M. Tagawa ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Surface Morphology ◽  
Basal Plane ◽  
The Other ◽  
Solution Growth ◽  
Interference Microscopy ◽  
Growth Surface ◽  
X Ray ◽  
Top Seeded Solution Growth ◽  
The Relationship

The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topography. Basal plane dislocations were generated at the boundaries of the domains with the different macrosteps advance directions. On the other hand, at the position where macrosteps advance to the same direction, BPDs were hardly observed. This results suggest that BPD density can be decreased by the suppression of the collision of macrosteps during the solution growth on the C face controlling the surface morphology.

Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals

2016 ◽  
Vol 858 ◽  
pp. 65-68
Author(s):  
Takashi Kato ◽  
Kazuhiko Kusunoki ◽  
Kazuaki Seki ◽  
Nobuhiro Okada ◽  
Kazuhito Kamei
Keyword(s):  
Surface Morphology ◽  
Flow Direction ◽  
Solute Concentration ◽  
The Other ◽  
Solution Growth ◽  
Morphological Stability ◽  
Crystalline Morphology ◽  
Solution Flow ◽  
Step Flow ◽  
Flow Directions

We investigated the effect of the solution flow on crystalline morphology in the off-axis 4H-SiC solution growth. In particular, we focused on the relation between the Si solution flow and step flow directions. In step parallel flow in which the solution drifted transversely to the step flow direction of the off-axis substrate, it was possible to attain a better surface morphology than in the flow in which the solution drifted toward the other direction. Furthermore, it was found that the surface morphology was found to be improved as the solution flow velocity increased. These improvements in the morphological stability are presumed to be caused by aligning the solute concentration fluctuation along the steps.

Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent

2014 ◽  
Vol 778-780 ◽  
pp. 67-70 ◽  
Author(s):  
S. Harada ◽  
Yuji Yamamoto ◽  
S. Xiao ◽  
M. Tagawa ◽  
Toru Ujihara
Keyword(s):  
Surface Morphology ◽  
Screw Dislocation ◽  
Edge Dislocation ◽  
Grown Crystal ◽  
The Other ◽  
Solution Growth ◽  
Growth Surface ◽  
Threading Dislocation ◽  
Other Hand

Surface morphology and threading dislocation conversion behavior during solution growth of 4H-SiC using pure Si and Al-Si solvents was investigated. The growth surfaces on the C face were smoother than the Si face. By the addition of Al to the solvent, the growth surface became smooth on the C face and rough on the Si face. Threading screw dislocation conversion took place only in the grown crystals on the Si face and threading edge dislocation conversion occurs both on the Si face and the C face using the pure Si solvent. On the other hand, in the grown crystal on the C face using the Al-Si solvent, the threading dislocation conversion was hardly observed. These results indicate that the threading dislocation conversion behavior is influenced by the surface morphology.

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