A Series of Unique Architecture Building of Layered Zinc Hydroxides: Self-Assembling Stepwise Growth of Layered Zinc Hydroxide Carbonate and Conversion into Three-Dimensional ZnO

2016 ◽  
Vol 16 (2) ◽  
pp. 887-894 ◽  
Author(s):  
Bo Song ◽  
Yuqiao Wang ◽  
Xia Cui ◽  
Zhaoxia Kou ◽  
Lifang Si ◽  
...  
1997 ◽  
Vol 3 (S2) ◽  
pp. 431-432
Author(s):  
S. A. Harfenist ◽  
Z. L. Wang ◽  
R. L. Whetten ◽  
I. Vezmar ◽  
M. M. Alvarez ◽  
...  

Silver nanocrystals passivated by dodecanethiol self-assembled monolayers were produced using an aerosol technique described in detail elsewhere [1]. Self-assembling passivated nanocrystal-superlattices (NCS's) involve self-organization into monolayers, thin films, and superlattices of size-selected nanoclusters encapsulated in a protective compact coating [2,3,4,5,6,7]. We report the preparation and structure characterization of three-dimensional (3-D) hexagonal close-packed Ag nanocrystal supercrystals from Ag nanocrystals of ˜4.5 nm in diameters. The crystallography of the superlattice and atomic core lattices were determined using transmission electron microscopy (TEM) and high-resolution TEM.SEM was used to image the nanocrystal superlattices formed on an amorphous carbon film of an TEM specimen grid (fig. la). The superlattice films show well shaped, sharply faceted, triangular shaped sheets. Figure lb depicts numerous Ag nanocrystal aggregates uniformly distributed over the imaging region. Inset in this figure is an enlargement of the boxed region at the edge of a supercrystal typifying the ordered nanocrystal packing.


1997 ◽  
Vol 482 ◽  
Author(s):  
H. Hirayama ◽  
S. Tanaka ◽  
P. Ramvall ◽  
Y. Aoyagi

AbstractWe demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.


2005 ◽  
Vol 438 (1-2) ◽  
pp. 102-106 ◽  
Author(s):  
Zhongjun Li ◽  
Xiaoqing Shen ◽  
Xun Feng ◽  
Peiyuan Wang ◽  
Zhishen Wu

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