scholarly journals Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)

2021 ◽  
Author(s):  
Arun Kumar ◽  
Raimondo Cecchini ◽  
Lorenzo Locatelli ◽  
Claudia Wiemer ◽  
Christian Martella ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Epitaxial Layers ◽  
Large Area ◽  
Movpe Growth

Highly-uniform large-area MOVPE growth of InGaAsP by controlled stagnation point flow

1991 ◽  
Vol 115 (1-4) ◽  
pp. 231-235 ◽  
Author(s):  
M. Kondo ◽  
J. Okazaki ◽  
H. Sekiguchi ◽  
T. Tanahashi ◽  
S. Yamazaki ◽  
...  
Keyword(s):  
Stagnation Point ◽  
Stagnation Point Flow ◽  
Large Area ◽  
Movpe Growth ◽  
Highly Uniform

Large-Area MOVPE Growth of an n-InGaP/InGaAs/GaAs HEMT Structure Using TBP

1993 ◽  
Author(s):  
H. Ochimizu ◽  
T. Kikkawa ◽  
S. Kuroda ◽  
K. Kasai ◽  
J. Komeno
Keyword(s):  
Large Area ◽  
Movpe Growth ◽  
Hemt Structure

Current status of large-area MOVPE growth of HgCdTe device heterostructures for infrared focal plane arrays

2006 ◽  
Vol 35 (6) ◽  
pp. 1275-1282 ◽  
Author(s):  
C. D. Maxey ◽  
J. C. Fitzmaurice ◽  
H. W. Lau ◽  
L. G. Hipwood ◽  
C. S. Shaw ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Current Status ◽  
Large Area ◽  
Infrared Focal Plane Arrays ◽  
Movpe Growth

Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs

1990 ◽  
Vol 29 (Part 2, No. 1) ◽  
pp. L10-L12 ◽  
Author(s):  
Hitoshi Tanaka ◽  
Nobuaki Tomesakai ◽  
Hiromi Itoh ◽  
Tatsuya Ohori ◽  
Kozo Makiyama ◽  
...  
Keyword(s):  
Large Area ◽  
Movpe Growth

Hydrogen implantation-induced large area exfoliation in AlN epitaxial layers

2009 ◽  
Vol 207 (1) ◽  
pp. 29-32 ◽  
Author(s):  
U. Dadwal ◽  
R. Scholz ◽  
P. Kumar ◽  
D. Kanjilal ◽  
S. Christiansen ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Large Area ◽  
Hydrogen Implantation

Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs

2006 ◽  
Vol 527-529 ◽  
pp. 135-140 ◽  
Author(s):  
Bernd Thomas ◽  
Christian Hecht ◽  
René A. Stein ◽  
Peter Friedrichs
Keyword(s):  
System Stability ◽  
Market Development ◽  
Process Conditions ◽  
Epitaxial Layers ◽  
Large Area ◽  
Homoepitaxial Growth ◽  
The Past ◽  
Active Layers ◽  
Wafer Size ◽  
Drift Of Parameters

The rapid market development for SiC-devices during the last years can be attributed particularly to the success in supplying high-quality SiC wafers and corresponding epitaxial layers. The device quality could be enhanced and the costs were reduced by enlarging the wafer size as well as by a significant progress in epitaxial growth of active layers by using multi-wafer CVD systems. In this paper we want to give an overview of CVD multi-wafer systems used for SiC growth in the past and today. We present recent results of SiC homoepitaxial growth using our multi-wafer hot-wall CVD system. This equipment exhibits a capacity of 5×3” wafers per run and can be upgraded to a 7×3” or 5×4” setup. By optimizing the process conditions epitaxial layers with excellent crystal quality, purity and homogeneity of doping and thickness have been grown. Issues like reproducibility, drift of parameters and system stability over several runs will be discussed.

Influence of surface strain on the MOVPE growth of InGaP epitaxial layers

2007 ◽  
Vol 87 (3) ◽  
pp. 511-516 ◽  
Author(s):  
J. Novák ◽  
S. Hasenöhrl ◽  
I. Vávra ◽  
M. Kučera
Keyword(s):  
Surface Strain ◽  
Epitaxial Layers ◽  
Movpe Growth
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