Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy

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Akihiro Ohtake ◽  
Neul Ha ◽  
Takeshi Noda ◽  
Yoshiki Sakuma ◽  
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2000 ◽  
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Neul Ha ◽  
Takaaki Mano ◽  
Yu-Nien Wu ◽  
Ya-Wen Ou ◽  
Shun-Jen Cheng ◽  
...  

ACS Nano ◽  
2008 ◽  
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Yuriy I. Mazur ◽  
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Nobuyuki Koguchi

2021 ◽  
Author(s):  
Dr. Elisa Maddalena Sala ◽  
Max Godsland ◽  
Young In Na ◽  
Aristotelis Trapalis ◽  
Jon Heffernan

Abstract InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a Metal Organic Vapor Phase Epitaxy (MOVPE) reactor. Formation of metallic Indium droplets on the In0.53Ga0.47As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In0.53Ga0.47As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In0.53Ga0.47As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the Indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission Electron Microscopy (TEM) investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.


2015 ◽  
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Luca Esposito ◽  
Alexey Fedorov ◽  
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Andrea Martinelli ◽  
...  

2015 ◽  
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2001 ◽  
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A. Levin ◽  
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