Applications of Sol−Gel-Derived Membranes to Neutral Carrier-Type Ion-Sensitive Field-Effect Transistors

1997 ◽  
Vol 69 (13) ◽  
pp. 2379-2383 ◽  
Author(s):  
Keiichi Kimura ◽  
Takenobu Sunagawa ◽  
Masaaki Yokoyama
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Neutral Carrier

Anion-sensitive field-effect transistors based on sol–gel-derived membranes incorporating quaternary ammonium salts

The Analyst ◽  
1999 ◽  
Vol 124 (4) ◽  
pp. 517-520 ◽  
Author(s):  
Keiichi Kimura ◽  
Setsuko Yajima ◽  
Hironori Takase ◽  
Masaaki Yokoyama
Keyword(s):  
Quaternary Ammonium ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Quaternary Ammonium Salts ◽  
Ammonium Salts

Characteristics of the hydrogen ion-sensitive field effect transistors with sol–gel-derived lead titanate gate

2002 ◽  
Vol 469 (2) ◽  
pp. 205-216 ◽  
Author(s):  
Shiun-Sheng Jan ◽  
Jung-Lung Chiang ◽  
Ying-Chung Chen ◽  
Jung-Chuan Chou ◽  
Chien-Chuan Cheng
Keyword(s):  
Lead Titanate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Hydrogen Ion

Preparation and properties of hydrogen ion-sensitive field effect transistors with sol–gel-derived Mg-modified lead titanate gate

2003 ◽  
Vol 332 (1-3) ◽  
pp. 11-19 ◽  
Author(s):  
Shiun-Sheng Jan ◽  
Ying-Chung Chen ◽  
Jung-Chuan Chou ◽  
Pei-Jane Jan ◽  
Chien-Chuan Cheng
Keyword(s):  
Lead Titanate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Hydrogen Ion

Preparation and Properties of Lead Titanate Gate Ion-Sensitive Field-Effect Transistors by the Sol–Gel Method

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 942-948 ◽  
Author(s):  
Shiun-Sheng Jan ◽  
Ying-Chung Chen ◽  
Jung-Chuan Chou ◽  
Chien-Chuan Cheng ◽  
Chun-Te Lu
Keyword(s):  
Lead Titanate ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Sulfate ion-selective field effect transistors prepared by sol–gel technique

2000 ◽  
Vol 66 (1-3) ◽  
pp. 216-218 ◽  
Author(s):  
J Liu ◽  
X Wu ◽  
Z Zhang ◽  
S Wakida ◽  
K Higashi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Sulfate Ion ◽  
Gel Technique

Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer

2007 ◽  
Vol 90 (12) ◽  
pp. 122112 ◽  
Author(s):  
T. Cahyadi ◽  
J. N. Tey ◽  
S. G. Mhaisalkar ◽  
F. Boey ◽  
V. R. Rao ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel

1-Dimensional fiber-based field-effect transistors made by low-temperature photochemically activated sol–gel metal-oxide materials for electronic textiles

RSC Advances ◽  
2016 ◽  
Vol 6 (22) ◽  
pp. 18596-18600 ◽  
Author(s):  
Chang Jun Park ◽  
Jae Sang Heo ◽  
Kyung-Tae Kim ◽  
Gyengmin Yi ◽  
Jingu Kang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Oxide Materials ◽  
Electronic Textiles ◽  
Oxide Fiber

We report the high performance metal-oxide fiber field-effect transistors (F-FETs) for electronic textiles (e-textiles).

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