Energy Deposition Control during Cluster Bombardment: A Molecular Dynamics View

2008 ◽  
Vol 80 (14) ◽  
pp. 5302-5306 ◽  
Author(s):  
Kathleen E. Ryan ◽  
Barbara J. Garrison
1988 ◽  
Vol 141 ◽  
Author(s):  
B. J. Garrison ◽  
M. T. Miller ◽  
D.W. Brenner

Summary:Molecular dynamics simulations have been performed that examine the microscopic mechanisms of rearrangements of atoms on the Si{ 1001 surface due to deposition of gas phase atoms. For thermal energy deposition we find that the gas atoms initially attach to dangling bonds of the surface dimer atoms. The dimer ’unreconstruction’ is due to a diffusion event on the surface, thus is temperature activated. We also find that dimers may open in regions of the surface where there are several atoms not at lattice sites, thus a low temperature amorphous structure. For 5-10 eV deposition there are direct mechanisms of dimer opening that occur on the 50-100 fs timescale. For energies greater than 15-20 eV there is implantation of the silicon atoms which leads to subsurface damage.


2006 ◽  
Vol 78 (20) ◽  
pp. 7206-7210 ◽  
Author(s):  
Michael F. Russo ◽  
Barbara J. Garrison

1990 ◽  
Vol 5 (11) ◽  
pp. 2652-2657 ◽  
Author(s):  
M. Caro ◽  
A. Ardelea ◽  
A. Caro

Based on the profile of the energy deposition obtained using the binary collision model, we follow the diffusion of energy by solving a simplified version of the heat equation. An estimation of the molten zone compares very well with the molecular dynamics prediction for the same event. We discuss the reasons for this agreement and the relevance of such simplified procedure in terms of present-day computer limitations to simulate high energy cascades using molecular dynamics.


1996 ◽  
Vol 440 ◽  
Author(s):  
C.R. Laurens ◽  
M.F Roşu ◽  
F. Pleiter ◽  
L. Niesen

AbstractWe deposited low-energy 111 atoms on a vicinal Cu(100) surface at 82K, and measured the atomic sites by means of the perturbed angular correlations technique (PAC). The sites of the as-deposited In atoms were determined for deposition energies ranging from 5 to 100 eV. The results are coinpared to Molecular Dynamics simulations of the deposition process.


2011 ◽  
Vol 39 (11) ◽  
pp. 2620-2621 ◽  
Author(s):  
M. P. Surh ◽  
I. N. Ellis ◽  
J. N. Glosli ◽  
F. R. Graziani ◽  
W. D. Krauss ◽  
...  

2011 ◽  
Vol 56 (19) ◽  
pp. 6475-6493 ◽  
Author(s):  
Rafael Garcia-Molina ◽  
Isabel Abril ◽  
Santiago Heredia-Avalos ◽  
Ioanna Kyriakou ◽  
Dimitris Emfietzoglou

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