Portable, Universal, and Visual Ion Sensing Platform Based on the Light Emitting Diode-Based Self-Referencing-Ion Selective Field-Effect Transistor

2014 ◽  
Vol 86 (3) ◽  
pp. 1380-1384 ◽  
Author(s):  
Xiaowei Zhang ◽  
Yanchao Han ◽  
Jing Li ◽  
Libing Zhang ◽  
Xiaofang Jia ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Ion Sensing ◽  
Sensing Platform ◽  
Effect Transistor

scholarly journals Lateral organic light-emitting diode with field-effect transistor characteristics

2005 ◽  
Vol 98 (7) ◽  
pp. 074506 ◽  
Author(s):  
Takahito Oyamada ◽  
Hiroyuki Uchiuzou ◽  
Seiji Akiyama ◽  
Yoshiaki Oku ◽  
Noriyuki Shimoji ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Effect Transistor

scholarly journals Integrating organic light-emitting diode and field-effect-transistor in a single device

2008 ◽  
Vol 9 (3) ◽  
pp. 323-327 ◽  
Author(s):  
Bin Wei ◽  
Jun Wang ◽  
Chong Li ◽  
Aoi Shimada ◽  
Musubu Ichikawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Effect Transistor

scholarly journals Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7491
Author(s):  
Abbas Panahi ◽  
Deniz Sadighbayan ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Comsol Multiphysics ◽  
Subtle Difference ◽  
Back Gate ◽  
Sensing Platform ◽  
Type Layer ◽  
Type Contact ◽  
Effect Transistor ◽  
P Type

This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes. The structure is novel as it is based on a junction field-effect transistor with a subtle difference in that the top gate (n-type contact) has been removed to open the space for introducing the biomaterial and solution. The channel can be controlled through a back gate, enabling the sensor’s operation without a bulky electrode inside the solution. In this research, in order to demonstrate the sensor’s functionality for chemical and biosensing, we tested OG-JFET with varying pH solutions, cell adhesion (human oral neutrophils), human exhalation, and DNA molecules. Moreover, the sensor was simulated with COMSOL Multiphysics to gain insight into the sensor operation and its ion-sensitive capability. The complete simulation procedures and the physics of pH modeling is presented here, being numerically solved in COMSOL Multiphysics software. The outcome of the current study puts forward OG-JFET as a new platform for biosensing applications.

A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

2021 ◽  
Author(s):  
Abbas Panahi ◽  
Hamed Osouli Tabrizi ◽  
Priyadarshini Mangannavar ◽  
Oleg Chebotarev ◽  
Andrew Fung ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Life Science ◽  
Sensing Platform ◽  
Effect Transistor ◽  
Electronic Sensing

IGZO-based electrolyte-gated field-effect transistor for in situ biological sensing platform

2018 ◽  
Vol 262 ◽  
pp. 876-883 ◽  
Author(s):  
Myung-Sic Chae ◽  
Ju Hyun Park ◽  
Hyun Woo Son ◽  
Kyo Seon Hwang ◽  
Tae Geun Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Biological Sensing ◽  
Sensing Platform ◽  
Effect Transistor

DNA hydrogel to improve solution-gate graphene field effect transistor in all-solid-state

2021 ◽  
Vol 16 (12) ◽  
pp. P12034
Author(s):  
S. Hu ◽  
Y. Jia
Keyword(s):  
Solid State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Hydrogel Scaffold ◽  
Sensing Platform ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Dna Hydrogel

Abstract The solution-gate graphene field effect transistor (Sg-GFET), as a popular sensing platform, its applications are still hindered by the deficiency in all-solid-state, due to the dependence on liquid-state gate-dielectric. Inspired by DNA hydrogel which can provide microporous architecture to accommodate the fluidic analyte, moreover, its combination with graphene is believed to foster electron transport in the field of electrochemistry. We are interested to take advantage of DNA hydrogel's solid-state and capability for holding solution, and investigate whether it can replace the traditional solution. So pure DNA hydrogel, their complexes with GO (GO/DNA hydrogel) and RGO (RGO/DNA hydrogel) are studied herein. Their micro-porous 3D morphologies are demonstrated, their influences on the electrical characteristics of GFETs are carefully examined and proved to be able to maintain the typical bipolarity of Sg-GFET, firstly. Then, pure DNA hydrogel and GO/DNA hydrogel are selected as the optimized gate-dielectrics, because of their renewability after dehydration. Furthermore, by using aptamer-based heavy metal ions (Pb2+ and Hg2+) detections as proof-of-concept, the strategies for building the sensing platform based on the optimized hydrogel dielectric-gated GFETs are studied. It is found, for the purpose of substituting fluidic dielectric in traditional Sg-GFET, the scheme of directly mounting aptamer on graphene channel and coating pure DNA hydrogel on it is demonstrated to be better than the strategies of using GO/DNA hydrogel and hybriding aptamer probes in hydrogel scaffold. It is explained according to surface charge sensing mechanism. At last, the performances of the sensing platform based on the proposed DNA hydrogel gated GFETs are testified by the detections and selectivity examinations for Pb2+ and Hg2+. Conclusively, pure DNA hydrogel is expected to be a promising candidate in the future all-solid-state Sg-GFET.

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