Comment on “Tunable Generation and Adsorption of Energetic Compounds in the Vapor Phase at Trace Levels: A Tool for Testing and Developing Sensitive and Selective Substrates for Explosive Detection”

2013 ◽  
Vol 85 (5) ◽  
pp. 3013-3015
Author(s):  
Jay W. Grate ◽  
Robert G. Ewing ◽  
David A. Atkinson
2010 ◽  
Vol 82 (8) ◽  
pp. 3389-3393 ◽  
Author(s):  
Karine Bonnot ◽  
Pierre Bernhardt ◽  
Dominique Hassler ◽  
Christian Baras ◽  
Marc Comet ◽  
...  

Nanoscale ◽  
2014 ◽  
Vol 6 (3) ◽  
pp. 1467-1473 ◽  
Author(s):  
Linjuan Guo ◽  
Baiyi Zu ◽  
Zheng Yang ◽  
Hongyu Cao ◽  
Xuefang Zheng ◽  
...  

2005 ◽  
Vol 59 (10) ◽  
pp. 1194-1202 ◽  
Author(s):  
Royce W. Beal ◽  
Thomas B. Brill

The vibrational modes of the –NO2 group in more than fifty energetic compounds containing the C-nitro and N-nitro functionalities were observed and then calculated in optimized structures using density functional theory (B3LYP/6–31+G*). The trends in the symmetric and asymmetric stretches and scissor and out-of-plane deformations were explained by these calculations. A previously unreported correlation was found between the nitro group internal bonding angle and its asymmetric stretching frequency. The concept of meta and ortho/para directing groups was applicable to the trends in coupled motions in the nitroaromatic compounds. Both the scissor motion of C–NO2 groups and the out-of-plane deformation of N–NO2 groups were found to be virtually insensitive to the remainder of the molecule. These findings may be useful in analytical methods of explosive detection based on their infrared (IR) spectra.


2017 ◽  
Vol 26 (3) ◽  
pp. 616-623 ◽  
Author(s):  
Neena A. Gilda ◽  
Gayatri P. Vaidya ◽  
Maryam Shojaei Baghini ◽  
V. Ramgopal Rao

2010 ◽  
Vol 87 (5-8) ◽  
pp. 696-698 ◽  
Author(s):  
A. Greve ◽  
J. Olsen ◽  
N. Privorotskaya ◽  
L. Senesac ◽  
T. Thundat ◽  
...  

Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  

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