Time-of-Flight-Secondary Ion Mass Spectrometry Method Development for High-Sensitivity Analysis of Acid Dyes in Nylon Fibers

Chuanzhen Zhou; Min Li; Roberto Garcia; Anne Crawford; Keith Beck; David Hinks; Dieter P. Griffis

doi:10.1021/ac3025569

Time-of-Flight-Secondary Ion Mass Spectrometry Method Development for High-Sensitivity Analysis of Acid Dyes in Nylon Fibers

Analytical Chemistry ◽

10.1021/ac3025569 ◽

2012 ◽

Vol 84 (22) ◽

pp. 10085-10090 ◽

Cited By ~ 9

Author(s):

Chuanzhen Zhou ◽

Min Li ◽

Roberto Garcia ◽

Anne Crawford ◽

Keith Beck ◽

...

Keyword(s):

Mass Spectrometry ◽

Sensitivity Analysis ◽

Method Development ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

High Sensitivity ◽

Acid Dyes ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Secondary Ion

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Measurement of the Distribution of Boron on Prior Austenite Grain Boundaries by Means of Time-of-Flight Secondary Ion Mass Spectrometry Method

Tetsu-to-Hagane ◽

10.2355/tetsutohagane.tetsu-2019-099 ◽

2020 ◽

Vol 106 (6) ◽

pp. 321-330

Author(s):

Kyohei Ishikawa ◽

Hirofumi Nakamura ◽

Masaaki Fujioka ◽

Manabu Hoshino ◽

Jun Takahashi ◽

...

Keyword(s):

Mass Spectrometry ◽

Grain Boundaries ◽

Prior Austenite ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Austenite Grain ◽

Secondary Ion ◽

Prior Austenite Grain

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

10.3403/30199170u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon

10.3403/02631515u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

10.3403/30138811u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Delta Layer ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon

10.3403/30296417 ◽

2014 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

10.3403/30199170 ◽

2010 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Summary of ISO/TC 201 Standard: ISO 22415—Surface chemical analysis—Secondary ion mass spectrometry—Method for determining yield volume in argon cluster sputter depth profiling of organic materials

Surface and Interface Analysis ◽

10.1002/sia.6686 ◽

2019 ◽

Vol 51 (10) ◽

pp. 1018-1020

Author(s):

Alexander G. Shard ◽

Rasmus Havelund ◽

Martin P. Seah ◽

Charles A. Clifford

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Organic Materials ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Secondary Ion ◽

Surface Chemical Analysis

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Summary of ISO/TC 201 Standard: X ISO 17560:2002?Surface chemical analysis?Secondary ion mass spectrometry?Method for depth profiling of boron in silicon

Surface and Interface Analysis ◽

10.1002/sia.1994 ◽

2005 ◽

Vol 37 (1) ◽

pp. 90-91 ◽

Cited By ~ 7

Author(s):

Y. Homma

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon

10.3403/02631515 ◽

2002 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Surface Chemical Analysis

Download Full-text

Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth calibration for silicon using multiple delta-layer reference materials

10.3403/30138811 ◽

2009 ◽

Keyword(s):

Mass Spectrometry ◽

Chemical Analysis ◽

Reference Materials ◽

Secondary Ion Mass Spectrometry ◽

Surface Chemical ◽

Spectrometry Method ◽

Mass Spectrometry Method ◽

Delta Layer ◽

Secondary Ion ◽

Surface Chemical Analysis

Download Full-text