Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1–xGex/Ge Quantum Well Structures

2012 ◽  
Vol 84 (5) ◽  
pp. 2292-2298 ◽  
Author(s):  
Richard J. H. Morris ◽  
Mark G. Dowsett ◽  
Richard Beanland ◽  
Andrew Dobbie ◽  
Maksym Myronov ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Quantum Well ◽  
Erosion Rate ◽  
Secondary Ion Mass Spectrometry ◽  
Rate Variation ◽  
Quantum Well Structures ◽  
Depth Profiles ◽  
Ultralow Energy ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Surfactant-Mediated Growth of SiGe/Si Quantum-Well Structures Studied by Photoluminescence Technique and Secondary Ion Mass Spectrometry

1995 ◽  
Vol 399 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
D. Krüger ◽  
J. Klatt ◽  
R. Kurps
Keyword(s):  
Mass Spectrometry ◽  
Quantum Well ◽  
Secondary Ion Mass Spectrometry ◽  
Near Band Edge ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Ion Mass Spectrometry ◽  
Dimensional Growth ◽  
Temperature Window ◽  
Secondary Ion

ABSTRACTIn this investigation, surfactant-mediated growth of SiGe/Si single quantum-well structures is studied by photoluminescence and secondary ion mass spectrometry. The samples were grown by molecular-beam epitaxy and Sb was used as a surfactant. The photon energy of the SiGe-related near-band-edge photoluminescence was used to probe the action of Sb as a surfactant to promote two-dimensional growth and to reduce segregation of Ge during growth. First, the "growth-temperature window" at which Sb acts preferentially as a surfactant was determined. Then, at this optimized temperature of 700°C, the influence of different Sb coverages was investigated and it was found that 0.5 monolayer was a sufficient coverage to obtain full surfactant action. Ge concentration depth profiles obtained by secondary ion mass spectrometry confirmed the effect of surfactant-mediated growth and, in addition, the unintentional incorporation of the Sb surfactant during growth was determined quantitatively. In a final experiment the effect of deposition of Sb on either the lower or the upper heterointerface is addressed.

Effects of Cryogenic Sample Analysis on Molecular Depth Profiles with TOF-Secondary Ion Mass Spectrometry

2010 ◽  
Vol 82 (19) ◽  
pp. 8291-8299 ◽  
Author(s):  
Alan M. Piwowar ◽  
John S. Fletcher ◽  
Jeanette Kordys ◽  
Nicholas P. Lockyer ◽  
Nicholas Winograd ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Analysis ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Quantitation of Secondary Ion Mass Spectrometry (SIMS) for HgCdTe.

1983 ◽  
Vol 25 ◽  
Author(s):  
Lawrence E. Lapides ◽  
George L. Whiteman ◽  
Robert G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Ionization Potential ◽  
Electron Affinity ◽  
Secondary Ion Mass Spectrometry ◽  
Relative Sensitivity ◽  
Depth Profiles ◽  
Ion Mass Spectrometry ◽  
Sensitivity Factors ◽  
Secondary Ion

ABSTRACTQuantitative depth profiles of impurities in LPE layers of HgCdTe have been determined using relative sensitivity factors calculated from ion implantation profiles. Standards were provided for Li, Be, B, C, F, Na, Mg, Al, Si, P, S, Cl, Cu, Ga, As, Br, and In. Relative sensitivity factors as a function of ionization potential for O2+ primary ion SIMS and electron affinity for Cs+ primary ion SIMS have been calculated in order to extend quantitation to elements not yet implanted. Examples of depth profiles for implant standards and unimplanted layers are given.

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