Uncooled GaSb/GaAlAsSb photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9-1.8 µm have been developed. Active GaSb layer was grown using lead as a neutral solvent in order to reduce the concentration of natural acceptors. The capacity of the photodiodes with a diameter of photosensitive area of 300 µm was 115−135 pF with no bias and 62−70 pF at U=−1.5 V. The photodiode speed of response measured using an InGaAsP/InP laser with a wavelength of 1.55 µm reached tau=42−60 ns in the photovoltaic mode. It is shown experimentally that the photodiodes can be used without cooling to detect the pulsed radiation of lasers and LEDs in the near-infrared region of the spectrum.
Lanthanides (LnIII) are well known for their characteristic emission in the Near-Infrared Region (NIR). However, direct excitation of lanthanides is not feasible as described by Laporte’s parity selection rule. Here,...
InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...
Retraction of ‘Water-soluble multidentate polymers compactly coating Ag2S quantum dots with minimized hydrodynamic size and bright emission tunable from red to second near-infrared region’ by Rijun Gui et al., Nanoscale, 2014, 6, 5467–5473, DOI: 10.1039/C4NR00282B.
Preparation of color-tunable and stable plasmonic MoO3 nanomaterials remains challenging, due to the lack of an effective preparation strategy and surface protection in heavily doped MoO3.
Неохлаждаемые фотодиоды для регистрации импульсного инфракрасного излучения в спектральном диапазоне 0.9-1.8 мкм