Direct-linked gas chromatography-Fourier transform infrared-mass spectrometer system

1981 ◽  
Vol 53 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Charles L. Wilkins ◽  
Gary N. Giss ◽  
Gregory M. Brissey ◽  
Steven. Steiner
Keyword(s):  
Gas Chromatography ◽  
Fourier Transform ◽  
Mass Spectrometer ◽  
Fourier Transform Infrared ◽  
Mass Spectrometer System ◽  
Spectrometer System

The Composition of Essential Oils Obtained from Achillea millefolium and Matricaria chamomilla L., Originary from Romania

2018 ◽  
Vol 68 (12) ◽  
pp. 2787-2795 ◽  
Author(s):  
Mariana Daniela Berechet ◽  
Elena Manaila ◽  
Maria Daniela Stelescu ◽  
Gabriela Craciun
Keyword(s):  
Gas Chromatography ◽  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Chemical Composition ◽  
Essential Oils ◽  
Fourier Transform Infrared Spectroscopy ◽  
Mass Spectrometer ◽  
Fourier Transform Infrared ◽  
Achillea Millefolium ◽  
Matricaria Chamomilla

In the present study we have investigated the chemical composition of the essential oils extracted by the procedure of hydrodistillation, from fresh flowers of Matricaria Chamomilla L. and Achillea Millefolium from Romania, two genres belonging to the same family, Asteraceae. The obtained essential oils were analyzed using the techniques of Gas Chromatography coupled with Mass Spectrometer and Fourier Transform Infrared Spectroscopy. It was found that both essential oils were dominated by the presence of terpenes. Aliphatic components were modest represented in both essential oils. The results were compared with those reported by other authors. Similarities consist in the domination of the same class of compounds and in the same modest representation of others. One of differences consists in the presence of some compounds with significant medicinal role, which were not reported by other authors. Another difference consists in the presence of some compounds in higher concentrations than those reported by other authors.

The Influence of Doping on the Etching of Si(111)

1986 ◽  
Vol 75 ◽  
Author(s):  
Harold F. Winters ◽  
D. Haarer
Keyword(s):  
Mass Spectrometer ◽  
Doping Level ◽  
Etch Rate ◽  
Plasma Reactors ◽  
Doping Effects ◽  
Mass Spectrometer System ◽  
Spectrometer System

AbstractIt has been recognized for some time that the doping level in silicon influences etch rate in plasma environments[1–8]. We have now been able to reproduce and investigate these doping effects in a modulated-beam, mass spectrometer system described previously [9] using XeF2 as the etchant gas. The phenomena which have been observed in plasma reactors containing fluorine atoms are also observed in our experiments. The data has led to a model which explains the major trends.

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