scholarly journals Optimized rectenna design

2015 ◽  
Vol 2 (1) ◽  
pp. 44-50 ◽  
Author(s):  
Hubregt J. Visser ◽  
Shady Keyrouz ◽  
A. B. Smolders

Design steps are outlined for maximizing the RF-to-dc power conversion efficiency (PCE) of a rectenna. It turns out that at a frequency of 868 MHz, a high-ohmic loaded rectifier will lead to a highly sensitive and power conversion efficient rectenna. It is demonstrated that a rectenna thus designed, using a 50 Ω antenna and lumped element matching network gives a superior PCE compared with state of the art also for lower resistive loading. By omitting the matching network and directly, conjugate impedance matching the antenna to the rectifier, the PCE may be further increased and the rectenna size reduced as it is demonstrated with a rectenna prototype measuring only 0.028 squared wavelengths at 868 MHz and demonstrating a PCE of 55% for a −10 dBm RF input power level.

2019 ◽  
Vol 11 (7) ◽  
pp. 658-665
Author(s):  
Daniel Kienemund ◽  
Nicole Bohn ◽  
Thomas Fink ◽  
Mike Abrecht ◽  
Walter Bigler ◽  
...  

AbstractLow loss, ferroelectric, fully-printed varactors for high-power matching applications are presented. Piezoelectric-induced acoustic resonances reduce the power handling capabilities of these varactors by lowering the Q-factor at the operational frequency of 13.56 MHz. Here, a quality factor of maximum 142 is achieved with an interference-based acoustic suppression approach utilizing double metal–insulator–metal structures. The varactors show a tunability of maximum 34% at 300 W of input power. At a power level of 1 kW, the acoustic suppression technique greatly reduces the dissipated power by 62% from 37 W of a previous design to 14.2 W. At this power level, the varactors remain tunable with maximum 18.2% and 200 V of biasing voltage.


2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Mohammad M. Fakharian

This paper introduces a wideband rectenna that can scavenge ambient wireless power to a range of frequency band from 0.91 GHz to 2.55 GHz efficiently. The proposed rectenna is based on a wideband 2 × 2 fractal monopole antenna array with omnidirectional radiation patterns and high gains of 5 to 8.3 dBi at the desired bands. An improved two-branch impedance matching technique is presented which is designed to enhance the rectifier circuit performance with a relatively low input power ranging from −25 dBm to 10 dBm. Also, a full-wave wideband rectifier that can suitably improve the RF-to-DC power conversion efficiency is designed for the rectenna. A peak efficiency of 76%, 71%, 61%, and 62% is obtained at 950, 1850, 2100, and 2450 MHz, respectively. Measurement results show that a conversion efficiency of 68% has been achieved over an optimal 4.7 kΩ resistor when the simultaneous four-band input power level is −10 dBm. Moreover, an output DC voltage of around 243 mV with voltage varying within 160–250 mV can be achieved by gathering the low ambient wireless power inside laboratory. This study proves that the proposed rectenna can be applied to a range of many low-power electronic applications.


Author(s):  
I. Adam ◽  
M.N. M. Yasin ◽  
M.E. A. Aziz ◽  
Sulaiman M.I.

One of challenge in rectenna design is the impedance matching of the antenna to the rectifier load. Rectifier exhibits complex impedance while antennas are normally designed to match either 50 Ω or 75 Ω loads. For the optimum power transfer between antenna and the rectifier circuit, both impedances should be matched. This paper presents the design and development of the 7-stages Dickson multiplier in energy harvesting. The objective of this paper is to analyze the performance of the designed multiplier together with matching circuit. An improvement of 60% output voltage is achieved by feeding -30dBm of low input power at the multiplier circuit.


Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.


Author(s):  
Lei Wang ◽  
Ying Pang ◽  
Wei Tian ◽  
Qianming Xu ◽  
Shuhan Liao ◽  
...  

Sensors ◽  
2014 ◽  
Vol 14 (4) ◽  
pp. 6828-6843 ◽  
Author(s):  
Jianfei An ◽  
Kezhu Song ◽  
Shuangxi Zhang ◽  
Junfeng Yang ◽  
Ping Cao

Sign in / Sign up

Export Citation Format

Share Document