Microstructural characterization of AIN sintered with Y2O3
Aluminum nitride's high thermal but low electrical conductivity make it a potential ceramic packaging material. Processing history, however, can have significant effects on these properties and studies aimed at correlating them to the processing and microstructure are sparse.Pure AIN cannot be readily sintered without additives. Addition of Y2O3 significantly improves its densification behavior and the results presented here concern microstructural analysis of AIN sintered with Y2O3.High-purity AIN powder (containing 1.24% oxygen impurity) with 3 or 9 weight% Y2O3 added was sintered in N2 at 1850°C for 1 hour followed by a further 3 hours at 1900°C. Samples made using this treatment were >95% dense. Specimens for microstructural investigation were prepared using standard techniques and examined using a JEOL 200 CX AEM.The general microstructure of all specimens consists of AIN grains with pockets of intergranular phase(s) located at triple points and some grain boundaries (FIG. 1).