Plasma characteristics and properties of Cu films prepared by high power pulsed magnetron sputtering

Vacuum ◽  
2017 ◽  
Vol 135 ◽  
pp. 93-100 ◽  
Author(s):  
B.H. Wu ◽  
J. Wu ◽  
F. Jiang ◽  
D.L. Ma ◽  
C.Z. Chen ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Cu Films ◽  
Plasma Characteristics ◽  
Pulsed Magnetron

scholarly journals Discharge model and plasma characteristics of high-power pulsed magnetron sputtering titanium target

2021 ◽  
Vol 70 (18) ◽  
pp. 180701-180701
Author(s):  
Chen Chang-Zi ◽  
◽  
Ma Dong-Lin ◽  
Li Yan-Tao ◽  
Leng Yong-Xiang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Titanium Target ◽  
Discharge Model ◽  
Plasma Characteristics ◽  
Pulsed Magnetron

Structure and stress of Cu films prepared by high power pulsed magnetron sputtering

Vacuum ◽  
2019 ◽  
Vol 160 ◽  
pp. 226-232 ◽  
Author(s):  
D.L. Ma ◽  
P.P. Jing ◽  
Y.L. Gong ◽  
B.H. Wu ◽  
Q.Y. Deng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Cu Films ◽  
Pulsed Magnetron

Properties of ultra-thin Cu films grown by high power pulsed magnetron sputtering

2017 ◽  
Vol 631 ◽  
pp. 72-79 ◽  
Author(s):  
A.A. Solovyev ◽  
V.A. Semenov ◽  
V.O. Oskirko ◽  
K.V. Oskomov ◽  
A.N. Zakharov ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Cu Films ◽  
Pulsed Magnetron

Pulse synchronized substrate bias for the High Power Pulsed Magnetron Sputtering deposition of CrAlN

2021 ◽  
pp. 138792
Author(s):  
K. Bobzin ◽  
T. Brögelmann ◽  
N.C. Kruppe ◽  
M. Engels ◽  
C. Schulze
Keyword(s):  
Magnetron Sputtering ◽  
High Power ◽  
Substrate Bias ◽  
Sputtering Deposition ◽  
Pulsed Magnetron

Influence of peak current on substrate plasma sheath properties of Ti films deposited by high-power pulsed magnetron sputtering

2019 ◽  
Vol 33 (01n03) ◽  
pp. 1940016
Author(s):  
C. Z. Chen ◽  
D. L. Ma ◽  
N. Huang ◽  
Y. X. Leng
Keyword(s):  
Magnetron Sputtering ◽  
Equivalent Circuit ◽  
Plasma Density ◽  
High Power ◽  
Equivalent Circuit Model ◽  
Film Structure ◽  
Circuit Model ◽  
Plasma Sheath ◽  
Peak Current ◽  
Pulsed Magnetron

For film deposition, the substrate sheath properties, such as the plasma density, ion-to-atom ratios around the substrate, are more important for the film structure. In this paper, titanium thin films were deposited on grounded substrates by high-power pulsed magnetron sputtering (HPPMS) with the peak current in the range of 113–185 A. A simple and new equivalent circuit model of the sheath was established to study the plasma density around the substrate sheath. The Ti ion-to-atom ratios near substrate were studied by optical emission spectroscopy (OES), and the film structure was detected by transmission electron microscopy (TEM). The results showed that the calculated plasma density was from 0.8 × 10[Formula: see text] to 1.4 × 10[Formula: see text] m[Formula: see text] at different peak current. These were consistent with the results measured by a modified one-grid ion collector using saturation current probe method, which proved our proposed equivalent circuit model was correct. The Ti ion-to-atom ratios around the substrate were estimated at about 24%–62%. The plasma density and ion to atom ratio around the substrate increased with the peak current, and this could lead to a higher film crystallization and preference growth on Ti (101) and (100).

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