The influence of Ni catalyst on the growth of carbon nanotubes on Si substrates

Vacuum ◽  
2006 ◽  
Vol 81 (1) ◽  
pp. 22-24 ◽  
Author(s):  
T. Daniš ◽  
M. Kadlečíková ◽  
A. Vojačková ◽  
J. Breza ◽  
M. Michalka ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ni Catalyst ◽  
Si Substrates

Fabrication of Carbon Nanotube Triode Using Helicon Plasma Cvd with Electroplated Nico Catalyst

2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Plasma Cvd ◽  
Helicon Plasma ◽  
Plasma Enhanced Cvd ◽  
Turn On ◽  
Aligned Carbon Nanotubes ◽  
Vertically Aligned

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.

Effects of Ni catalyst–substrate interaction on carbon nanotubes growth by CVD

2007 ◽  
Vol 37 (1-2) ◽  
pp. 21-25 ◽  
Author(s):  
G.P. Veronese ◽  
R. Rizzoli ◽  
R. Angelucci ◽  
M. Cuffiani ◽  
L. Malferrari ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ni Catalyst ◽  
Substrate Interaction

(n,m) Assignments and quantification for single-walled carbon nanotubes on SiO2/Si substrates by resonant Raman spectroscopy

Nanoscale ◽  
2015 ◽  
Vol 7 (24) ◽  
pp. 10719-10727 ◽  
Author(s):  
Daqi Zhang ◽  
Juan Yang ◽  
Feng Yang ◽  
Ruoming Li ◽  
Meihui Li ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Si Substrates ◽  
Resonant Raman ◽  
Walled Carbon Nanotubes

An ωRBM–dt relation specifically suitable for random SWNTs on SiO2/Si substrates grown by various catalysts.

scholarly journals Site-specific forest-assembly of single-wall carbon nanotubes on electron-beam patterned SiOx/Si substrates

2008 ◽  
Vol 28 (8) ◽  
pp. 1366-1371 ◽  
Author(s):  
Haoyan Wei ◽  
Sang Nyon Kim ◽  
Sejong Kim ◽  
Bryan D. Huey ◽  
Fotios Papadimitrakopoulos ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Beam ◽  
Single Wall Carbon Nanotubes ◽  
Site Specific ◽  
Single Wall Carbon ◽  
Si Substrates

Variation of Size and Alignment in Carbon Nanotubes by Changes of Growth Condition

2001 ◽  
Vol 7 (S2) ◽  
pp. 428-429
Author(s):  
Paula P. Provencio ◽  
Michael P. Siegal ◽  
Donald L. Overmyer
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Dwell Time ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Nitrogen Atmosphere ◽  
Ni Catalyst ◽  
Multiwall Carbon Nanotube ◽  
Catalyst Layers

Carbon nanotubes have previously been grown on Ni coated glass, aligned vertical to the substrate over a multi-centimeter square area1. Under vacuum, the aligned nanotubes were grown below 666° C (strain point of the best display glass) by plasma-enhanced hot filament, chemical vapor deposition. It was found, the size and alignment of the nanotubes could be varied by changing the dwell time and the thickness of the catalytic Ni layer by plasma etching. in more recent, ongoing studies, the size of carbon nanotubes is varied by changing the growth temperature and dwell time under acetylene/nitrogen atmosphere using chemical vapor deposition onto W and Ni coated Si.Multiwall carbon nanotube films are grown using a thermally-activated chemical vapor deposition process. Thin Ni catalyst layers are sputtered onto W-coated Si(100) and reduced in a 600°C CO anneal. Nanotubes then grow at temperatures ranging from 630 - 790°C in an acetylene/nitrogen mixture.

Investigation on Field Electron Emission from Carbon Nanotubes on Nanocrystalline Diamond Films

2005 ◽  
Vol 23 ◽  
pp. 35-38 ◽  
Author(s):  
K.J. Liao ◽  
W.L. Wang ◽  
C. Cai ◽  
J.W. Lu ◽  
C.G. Hu
Keyword(s):  
Carbon Nanotubes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Electron Field Emission ◽  
Si Substrates ◽  
Turn On ◽  
Nanocrystalline Diamond Films ◽  
Electron Field ◽  
Hot Filament

The electron field emission from carbon nanotubes on nanocrystalline diamond films was investigated. Carbon nanotubes and nano-diamond films were deposited on Si substrates by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes on nanostructured films exhibited a lower value of the turn-on electric field than those of carbon nanotubes and nano-diamond. It was found that the turn-on field of nanotubes on nano-diamond was about 0.9V/μm, which was lower than those of carbon nanotubes and nano-diamond.

Effects of Silicon Substrate on the Growth of Carbon Nanotubes

2009 ◽  
Author(s):  
K. P. Yung ◽  
R. Y. J. Tay ◽  
J. Wei ◽  
B. K. Tay
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Reference Value ◽  
Chemical Vapor ◽  
Catalyst Layer ◽  
Ni Catalyst ◽  
Thermal And Mechanical Properties ◽  
Si Substrate ◽  
Different Types ◽  
Deposition Conditions

Due to their extraordinary electrical, thermal and mechanical properties, carbon nanotubes (CNTs) have been foreseen as potential materials for electronics devices in the future. To integrate CNTs in electronic applications, CNTs would need to be deposited on different types of Si substrate. In this study, CNTs were grown on Ni catalyst layer with four types of substrates, namely Si, n++ Si, p++ Si and SiO2, using Plasma Enhanced Chemical Vapor Deposition (PECVD). The morphology and microstructure of the CNT films were analyzed by scanning electron microscopy (SEM) and Raman spectroscope. It was found that the type of Si substrate has significant effects on CNT growing characteristics. The possible mechanisms for the observed results are proposed. These findings add significant reference value to select deposition conditions suitable for deposition of CNTs on different types of Si substrate.

Carbon nanotubes and nanostructures grown at below 400°C

2005 ◽  
Vol 901 ◽  
Author(s):  
Guan Yow Chen ◽  
P.C.H. Poa ◽  
S.J. Henley ◽  
V. Stolojan ◽  
S.R.P. Silva
Keyword(s):  
Carbon Nanotubes ◽  
Thermodynamic Simulation ◽  
Chemical Vapour ◽  
Growth Surface ◽  
Ni Catalyst ◽  
Process Conditions ◽  
Thermal Barrier ◽  
Titanium Layer ◽  
Novel Approach ◽  
Growth Properties

AbstractIn this paper, we report clear evidence for the growth of carbon nanotubes and nanostructures at low substrate temperatures, using direct-current plasma-enhanced chemical vapour deposition. The catalyst particles are mounted on a titanium layer which acts as a thermal barrier, and allows for a larger temperature gradient between the Ni catalyst surface and the substrate. A simple thermodynamic simulation shows that the temperature differential between the substrate growth surface and the growth electrode is determined by the thickness of the titanium layer. This facilitates the growth of nanotubes, as opposed to nanofibres with herring-bone or amorphous structures. The growth properties are discussed as a function of the bias voltage and hydrocarbon concentration. The heating during growth provided solely by the plasma is below 400°C and is dependent on the process conditions and the electrode configuration in the growth chamber. These conditions need to be taken into account when comparing processes across different growth methods and instruments. The novel approach based on the use of a thermal barrier ensures the synthesis of carbon nanotubes at room temperature substrate conditions, which can be attained with a suitable cooling scheme.

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