Electroforming-less and multi-level resistive switching characteristics in tungsten oxide thin film

2019 ◽  
Vol 674 ◽  
pp. 91-96 ◽  
Author(s):  
Seunghyup Lee ◽  
Ki Hoon Yun ◽  
Doeun Kim
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Resistive Switching ◽  
Oxide Thin Film ◽  
Multi Level ◽  
Switching Characteristics

Resistive switching characteristics of indium-tin-oxide thin film devices

2014 ◽  
Vol 211 (5) ◽  
pp. 1194-1199 ◽  
Author(s):  
Ali Khiat ◽  
Iulia Salaoru ◽  
Themistoklis Prodromakis
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Switching Characteristics ◽  
Thin Film Devices

Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

2011 ◽  
Vol 520 (5) ◽  
pp. 1656-1659 ◽  
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
Po-Chun Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Nonvolatile Memory ◽  
Oxide Thin Film ◽  
Ytterbium Oxide ◽  
Switching Characteristics

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

2018 ◽  
Vol 57 (6S1) ◽  
pp. 06HC03 ◽  
Author(s):  
Haider Abbas ◽  
Mi Ra Park ◽  
Yawar Abbas ◽  
Quanli Hu ◽  
Tae Su Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Manganese Oxide ◽  
Resistive Switching ◽  
Oxide Thin Film ◽  
Nanoparticle Assembly ◽  
Switching Characteristics ◽  
Hybrid Devices

scholarly journals Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung
Keyword(s):  
Resistive Switching ◽  
High Performance ◽  
Sio2 Nanoparticles ◽  
Visible Range ◽  
Resistive State ◽  
Switching Device ◽  
Structural Density ◽  
Multi Level ◽  
Switching Characteristics ◽  
Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

scholarly journals Highly efficient electro-optically tunable smart-supercapacitors using an oxygen-excess nanograin tungsten oxide thin film

2017 ◽  
Vol 166 ◽  
pp. 78-85 ◽  
Author(s):  
Akbar I. Inamdar ◽  
Jongmin Kim ◽  
Yongcheol Jo ◽  
Hyeonseok Woo ◽  
Sangeun Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
Highly Efficient ◽  
Oxygen Excess

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

2011 ◽  
Vol 520 (4) ◽  
pp. 1246-1250 ◽  
Author(s):  
Kou-Chen Liu ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang ◽  
Jiun-Jie Huang ◽  
Yun-Ju Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Resistive Switching ◽  
Film Properties ◽  
Switching Characteristics
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