Lithographic fabrication of point contact with Al2O3 rear-surface-passivated and ultra-thin Cu(In,Ga)Se2 solar cells

2018 ◽  
Vol 665 ◽  
pp. 91-95 ◽  
Author(s):  
Sungwoo Choi ◽  
Yukiko Kamikawa ◽  
Jiro Nishinaga ◽  
Akimasa Yamada ◽  
Hajime Shibata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Rear Surface ◽  
Point Contact

scholarly journals Realization of point contact for stacks Al2O3/SiNx rear surface passivated solar cells

2017 ◽  
Vol 283 ◽  
pp. 012030
Author(s):  
S J Wang ◽  
G J Jin ◽  
L L Wang ◽  
Z Zuo ◽  
Y L Meng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Rear Surface ◽  
Point Contact

Self-Patterning Rear Contact Schemes for Silicon Solar Cells

2012 ◽  
Vol 1400 ◽  
Author(s):  
Alison Lennon ◽  
Pei Hsuan Lu ◽  
Zhong Lu ◽  
Kai Wang
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Rear Surface ◽  
Point Contact ◽  
Aluminium Oxide ◽  
Cost Effective ◽  
Metal Contact ◽  
Silicon Solar Cells ◽  
Robust Processing ◽  
Anodised Aluminium

ABSTRACTHigher silicon solar efficiencies are possible if metal contact is made to the cell though openings in a well-passivated surface. Patterning for rear point-contact schemes has typically been achieved using deterministic patterning methods involving either the use of photolithography, laser or inkjet patterning. However, with these approaches it is difficult to achieve cost-effective, high-throughput and robust processing if very small and closely-spaced openings are required. In this paper we review recent progress in the use of self-patterning anodised aluminium oxide layers to both passivate and enable point metal contacts to the rear surface of silicon solar cells. We describe a wet chemical method for anodising aluminium layers thermally-evaporated on the rear surfaces of silicon solar cells, and demonstrate that the layers can result in excellent passivation of the underlying silicon and also enable metal contact to the solar cell. Additionally, we describe how patterning of either the anodic aluminium oxide layer or the source aluminium layer can result in patterns of metallic and dielectric regions on a surface, and how currently-available solar cell electroplating tools can be adapted to achieve anodisation of solar cells at commercial processing throughput rates.

scholarly journals Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfOx

2020 ◽  
Vol 11 ◽  
pp. 10
Author(s):  
Gizem Birant ◽  
Jorge Mafalda ◽  
Romain Scaffidi ◽  
Jessica de Wild ◽  
Dilara Gokcen Buldu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Rear Surface ◽  
Point Contact ◽  
Layer Growth ◽  
Absorber Layer ◽  
Passivation Layer ◽  
Mis Structure ◽  
Cell Parameters ◽  
Cigs Solar Cells

In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfOx was applied in a metal-insulator-semiconductor (MIS) structure, and it demonstrates a low interface trap density in combination with a negative density of charges. Since we used ultra-thin devices that are ideal to probe improvements at the rear, solar cell results indicated improvements in all cell parameters by the addition of 2 nm thick HfOx passivation layer with contact openings.

scholarly journals Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4849
Author(s):  
Chan Hyeon Park ◽  
Jun Yong Kim ◽  
Shi-Joon Sung ◽  
Dae-Hwan Kim ◽  
Yun Seon Do
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Rear Surface ◽  
Maximum Efficiency ◽  
Structural Factors ◽  
Carrier Recombination ◽  
Cigs Solar Cells ◽  
Effective Carrier ◽  
Opening Width

In this paper, we propose an optimized structure of thin Cu(In,Ga)Se2 (CIGS) solar cells with a grating aluminum oxide (Al2O3) passivation layer (GAPL) providing nano-sized contact openings in order to improve power conversion efficiency using optoelectrical simulations. Al2O3 is used as a rear surface passivation material to reduce carrier recombination and improve reflectivity at a rear surface for high efficiency in thin CIGS solar cells. To realize high efficiency for thin CIGS solar cells, the optimized structure was designed by manipulating two structural factors: the contact opening width (COW) and the pitch of the GAPL. Compared with an unpassivated thin CIGS solar cell, the efficiency was improved up to 20.38% when the pitch of the GAPL was 7.5–12.5 μm. Furthermore, the efficiency was improved as the COW of the GAPL was decreased. The maximum efficiency value occurred when the COW was 100 nm because of the effective carrier recombination inhibition and high reflectivity of the Al2O3 insulator passivation with local contacts. These results indicate that the designed structure has optimized structural points for high-efficiency thin CIGS solar cells. Therefore, the photovoltaic (PV) generator and sensor designers can achieve the higher performance of photosensitive thin CIGS solar cells by considering these results.

Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

2021 ◽  
Author(s):  
Giuk Jeong ◽  
Seunghwan Ji ◽  
Ji Woon Choi ◽  
Gihun Jung ◽  
Byungha Shin
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundaries ◽  
Carrier Transport ◽  
Surface Passivation ◽  
Rear Surface ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Absorber ◽  
Post Deposition

Sb2Se3, a quasi-1D structured binary chalcogenide, has great potential as a solar cell light absorber owing to its anisotropic carrier transport and benign grain boundaries when the absorber layer is...

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