scholarly journals Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates

2017 ◽  
Vol 636 ◽  
pp. 78-84 ◽  
Author(s):  
S. Vangelista ◽  
R. Piagge ◽  
S. Ek ◽  
T. Sarnet ◽  
G. Ghidini ◽  
...  
MRS Advances ◽  
2017 ◽  
Vol 2 (52) ◽  
pp. 3005-3010 ◽  
Author(s):  
Silvia Vangelista ◽  
Rossella Piagge ◽  
Satu Ek ◽  
Tiina Sarnet ◽  
Gabriella Ghidini ◽  
...  

ABSTRACTCerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN. In correspondence, we measure a relative concentration of Ce3+ equals to 22.0% in CeO2/Si and around 18% in CeO2/TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results underline the films differences and similarities between ALD-deposited CeO2 either on Si or TiN substrates, thus extending the knowledge on the CeO2 structural and chemical properties.


2016 ◽  
Vol 120 (27) ◽  
pp. 14681-14689 ◽  
Author(s):  
Shaista Babar ◽  
Anil U. Mane ◽  
Angel Yanguas-Gil ◽  
Elham Mohimi ◽  
Richard T. Haasch ◽  
...  

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.


2005 ◽  
Author(s):  
Jaan Aarik ◽  
Aarne Kasikov ◽  
Marco Kirm ◽  
Sven Lange ◽  
Teet Uustare ◽  
...  

2010 ◽  
Vol 114 (48) ◽  
pp. 20713-20718 ◽  
Author(s):  
Hyeunseok Cheun ◽  
Canek Fuentes-Hernandez ◽  
Yinhua Zhou ◽  
William J. Potscavage ◽  
Sung-Jin Kim ◽  
...  

1997 ◽  
Vol 71 (25) ◽  
pp. 3604-3606 ◽  
Author(s):  
Y. Kim ◽  
S. M. Lee ◽  
C. S. Park ◽  
S. I. Lee ◽  
M. Y. Lee

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