Potentiostatic deposition of Cu2O films as p-type transparent conductors at room temperature

2016 ◽  
Vol 616 ◽  
pp. 760-766 ◽  
Author(s):  
M.M. Moharam ◽  
E.M. Elsayed ◽  
J.C. Nino ◽  
R.M. Abou-Shahba ◽  
M.M. Rashad
Keyword(s):  
Room Temperature ◽  
Transparent Conductors ◽  
Potentiostatic Deposition ◽  
Cu2o Films ◽  
P Type

Record Conductivity for P-Type Transparent Conductors in Polycrystalline Thin Films of a Sulfide-Fluoride

2008 ◽  
Vol 1101 ◽  
Author(s):  
Jesse Frantz ◽  
Jasbinder S. Sanghera ◽  
Syed B. Qadri ◽  
Ishwar D. Aggarwal
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Protective Layer ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Cubic Phase ◽  
Face Centered Cubic ◽  
Polycrystalline Thin Films ◽  
Sulfur Fluoride ◽  
P Type

AbstractBarium copper sulfur fluoride thin films with a face-centered cubic phase in the Fm3m space group were synthesized via RF magnetron sputtering. The results of a detailed optical and electronic characterization of the films are presented. As-deposited, they exhibit degenerate p-type conductivity at room temperature of approximately 260 S/cm – higher than that of any previously reported p-TC. Their conductivity after post-deposition processing increases to as high as 800 S/cm. The films exhibit bandgaps ranging from 1.45-1.75 eV. They are typically deposited with a substrate temperature between room temperature and 100°C, making them suitable for deposition on plastic as well as glass or crystalline substrates. It was found that a silica protective layer reduces degradation in film transparency that is caused by exposure to air.

scholarly journals Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit

2016 ◽  
Vol 113 (46) ◽  
pp. 12929-12933 ◽  
Author(s):  
Chang Yang ◽  
Max Kneiβ ◽  
Michael Lorenz ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Visible Spectral Range ◽  
Transparent Conductors ◽  
Transparent Conductor ◽  
Temperature Dependent ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
P Type

A degenerate p-type conduction of cuprous iodide (CuI) thin films is achieved at the iodine-rich growth condition, allowing for the record high room-temperature conductivity of ∼156 S/cm for as-deposited CuI and ∼283 S/cm for I-doped CuI. At the same time, the films appear clear and exhibit a high transmission of 60–85% in the visible spectral range. The realization of such simultaneously high conductivity and transparency boosts the figure of merit of a p-type TC: its value jumps from ∼200 to ∼17,000 MΩ−1. Polycrystalline CuI thin films were deposited at room temperature by reactive sputtering. Their electrical and optical properties are examined relative to other p-type transparent conductors. The transport properties of CuI thin films were investigated by temperature-dependent conductivity measurements, which reveal a semiconductor–metal transition depending on the iodine/argon ratio in the sputtering gas.

Intrinsic n- and p-Type MgZnO Nanorods for Deep-UV Detection and Room-Temperature Gas Sensing

2015 ◽  
Vol 119 (52) ◽  
pp. 29186-29192 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Yu-Xian Lin ◽  
Jia-Jun Wu
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Uv Detection ◽  
Deep Uv ◽  
P Type

scholarly journals Dynamical Spin Injection into p-Type Germanium at Room Temperature

2013 ◽  
Vol 6 (2) ◽  
pp. 023001 ◽  
Author(s):  
Mariko Koike ◽  
Eiji Shikoh ◽  
Yuichiro Ando ◽  
Teruya Shinjo ◽  
Shinya Yamada ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Injection ◽  
Dynamical Spin ◽  
P Type

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

scholarly journals Effect of Microwave Processing and Glass Inclusions on Thermoelectric Properties of P-Type Bismuth Antimony Telluride Alloys for Wearable Applications

Energies ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 4524
Author(s):  
Amin Nozariasbmarz ◽  
Daryoosh Vashaee
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Materials ◽  
Room Temperature ◽  
Electronic Devices ◽  
Microwave Processing ◽  
Glass Inclusion ◽  
Wearable Electronic ◽  
P Type ◽  
Wearable Electronic Devices ◽  
Body Heat

Depending on the application of bismuth telluride thermoelectric materials in cooling, waste heat recovery, or wearable electronics, their material properties, and geometrical dimensions should be designed to optimize their performance. Recently, thermoelectric materials have gained a lot of interest in wearable electronic devices for body heat harvesting and cooling purposes. For efficient wearable electronic devices, thermoelectric materials with optimum properties, i.e., low thermal conductivity, high Seebeck coefficient, and high thermoelectric figure-of-merit (zT) at room temperature, are demanded. In this paper, we investigate the effect of glass inclusion, microwave processing, and annealing on the synthesis of high-performance p-type (BixSb1−x)2Te3 nanocomposites, optimized specially for body heat harvesting and body cooling applications. Our results show that glass inclusion could enhance the room temperature Seebeck coefficient by more than 10% while maintaining zT the same. Moreover, the combination of microwave radiation and post-annealing enables a 25% enhancement of zT at room temperature. A thermoelectric generator wristband, made of the developed materials, generates 300 μW power and 323 mV voltage when connected to the human body. Consequently, MW processing provides a new and effective way of synthesizing p-type (BixSb1−x)2Te3 alloys with optimum transport properties.

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

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