All-solution processed composite hole transport layer for quantum dot light emitting diode

2016 ◽  
Vol 603 ◽  
pp. 187-192 ◽  
Author(s):  
Xiaoli Zhang ◽  
Haitao Dai ◽  
Junliang Zhao ◽  
Shuguo Wang ◽  
Xiaowei Sun
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solution Processed ◽  
Light Emitting

Hexamethyldisilazane-mediated, full-solution-processed inverted quantum dot-light-emitting diodes

2017 ◽  
Vol 5 (3) ◽  
pp. 522-526 ◽  
Author(s):  
Yan Fu ◽  
Daekyoung Kim ◽  
Hyoungseok Moon ◽  
Heesun Yang ◽  
Heeyeop Chae
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solution Processed ◽  
Solution Deposition ◽  
Light Emitting ◽  
Full Solution

Fabrication of a multilayered quantum dot-light-emitting diode (QLED) with an inverted architecture cannot be usually fully solution-processed mainly due to the significant destruction of the pre-existing quantum dot (QD) emitting layer (EML) occurring during the subsequent solution-deposition of the hole transport layer (HTL).

Good Charge Balanced Inverted Red InP/ZnSe/ZnS-Quantum Dot Light-Emitting Diode with New High Mobility and Deep HOMO Level Hole Transport Layer

2020 ◽  
Vol 5 (12) ◽  
pp. 3868-3875
Author(s):  
Ji Eun Yeom ◽  
Dong Hyun Shin ◽  
Raju Lampande ◽  
Young Hun Jung ◽  
Nagarjuna Naik Mude ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
High Mobility ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Homo Level

Effects of the thickness of NiO hole transport layer on the performance of all-inorganic quantum dot light emitting diode

2014 ◽  
Vol 567 ◽  
pp. 72-76 ◽  
Author(s):  
Xiao Li Zhang ◽  
Hai Tao Dai ◽  
Jun Liang Zhao ◽  
Chen Li ◽  
Shu Guo Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diode ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting

Enhanced Performance Organic Light Emitting Diode With CuI:CuPC Composite Hole Transport Layer

2020 ◽  
Vol 19 ◽  
pp. 699-703
Author(s):  
Vinay Mohan ◽  
A. K. Gautam ◽  
S. D. Choudhary ◽  
M. K. Mariam Bee ◽  
R. Puviarasi ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

scholarly journals Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane)

2020 ◽  
Vol 10 (17) ◽  
pp. 6081
Author(s):  
Junekyun Park ◽  
Eunkyu Shin ◽  
Jongwoo Park ◽  
Yonghan Roh
Keyword(s):  
Quantum Dot ◽  
Photoelectron Spectroscopy ◽  
Surface Defects ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Atmospheric Conditions ◽  
Light Emitting ◽  
X Ray

We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication process. For instance, we can effectively deactivate the surface defects of quantum dot (QD) (e.g., CdSe/ZnS core-shell QDs in the current work) with the SiO bonds by simply mixing QDs with hexamethyldisilazane (HMDS) under atmospheric conditions. We observed the substantial improvement of device characteristics such that the current efficiency, the maximum luminance, and the QD lifetime were improved by 1.7–1.8 times, 15–18%, and nine times, respectively, by employing this process. Based on the experimental data (e.g., energy dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS)), we estimated that the growth of the SiOx on the surface of QDs is self-limited: the SiOx are effective to passivate the surface defects of QDs without deteriorating the intrinsic properties including the color-purity of QDs. Second, we proposed that the emission profiling study can lead us to the fundamental understanding of charge flow in each layer of QD-LEDs. Interestingly enough, many problems related to the charge-imbalance phenomenon were simply solved by selecting the combination of thicknesses of the hole transport layer (HTL) and the electron transport layer (ETL).

scholarly journals Enhanced efficiency and high temperature stability of hybrid quantum dot light-emitting diodes using molybdenum oxide doped hole transport layer

RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16252-16257 ◽  
Author(s):  
Jinyoung Yun ◽  
Jaeyun Kim ◽  
Byung Jun Jung ◽  
Gyutae Kim ◽  
Jeonghun Kwak
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Molybdenum Oxide ◽  
Temperature Stability ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Stable Operation ◽  
High Temperature Stability ◽  
Light Emitting

QLEDs introducing a p-doped HTL exhibit stable operation at high temperature up to 400 K.

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