All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier

2013 ◽  
Vol 532 ◽  
pp. 84-88 ◽  
Author(s):  
D.A. Spee ◽  
M.R. Schipper ◽  
C.H.M. van der Werf ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Moisture Barrier

Towards an All-Hot-Wire TFT: Silicon Nitride and amorphous Silicon deposited by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
B. Stannowski ◽  
M.K. van Veen ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

ABSTRACTWe present thin-film transistors with both amorphous silicon and silicon nitride deposited by hot-wire chemical vapor deposition. Hot-wire amorphous silicon with good electrical properties was deposited from the decomposition of silane at a substrate temperature of 250°C. For Hot-wire silicon nitride we used silane and ammonia at a substrate temperature of 340°C. In this paper we address structural and electrical properties of this material. A high ammonia flow results in porous films that exhibit post-deposition oxidation. By limiting the ammonia/silane ratio to 30, compact layers with a hydrogen content of only 10 at.% and a refractive index of 1.95 are obtained. Using this layer as gate dielectric results in thin-film transistors with good switching behavior and a field-effect mobility of 0.3 cm2/Vs.

Fabrications of Si Thin-Film Solar Cells by Hot-Wire Chemical Vapor Deposition and Laser Doping Techniques

2006 ◽  
Vol 45 (4B) ◽  
pp. 3516-3518 ◽  
Author(s):  
Shui-Yang Lien ◽  
Dong-Sing Wuu ◽  
Hsin-Yuan Mao ◽  
Bing-Rui Wu ◽  
Yen-Chia Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Hot Wire ◽  
Laser Doping ◽  
Si Thin Film

Thin-film transistors deposited by hot-wire chemical vapor deposition

2003 ◽  
Vol 430 (1-2) ◽  
pp. 220-225 ◽  
Author(s):  
B. Stannowski ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Hot Wire

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)

2011 ◽  
Vol 257 (8) ◽  
pp. 3320-3324 ◽  
Author(s):  
Su Kong Chong ◽  
Boon Tong Goh ◽  
Zarina Aspanut ◽  
Muhamad Rasat Muhamad ◽  
Chang Fu Dee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nanostructures ◽  
Hot Wire

Humidity Sensor Using CVD Deposited SnO2 Thin Film

2013 ◽  
Vol 667 ◽  
pp. 415-420
Author(s):  
A.K.S. Shafura ◽  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
S. Ahmad ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Humidity Sensor ◽  
Chemical Vapor ◽  
Sno2 Thin Film ◽  
Optical And Electrical Properties ◽  
Fesem Image ◽  
Thermal Chemical Vapor Deposition

In this paper we address sensitivity of SnO2 thin film deposited by thermal chemical vapor deposition in terms of its behavior towards humidity variations. The structural, optical and electrical properties of SnO2 thin film deposit at different substrate temperature grown by thermal chemical vapor deposition (CVD) are also reviewed. FESEM image reveal smallest particle size of SnO2 at substrate temperature 500°C. Pl measurement shows red shift of SnO2 at substrate temperature 500°C. All thin film performing slightly linear sensitivities towards relative humidity (RH%).

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