Pure red emission hybrid light-emitting devices based on the blend of CdSe/ZnS quantum dots and an n-type polymer

2012 ◽  
Vol 520 (24) ◽  
pp. 7153-7156 ◽  
Author(s):  
Gang Cheng ◽  
Dehua Hu ◽  
Ping Chen ◽  
Yu Duan ◽  
Yi Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Red Emission ◽  
Light Emitting ◽  
Light Emitting Devices

Organic-inorganic hybrid thin film light-emitting devices: interfacial engineering and device physics

2021 ◽  
Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Sandwich Structure ◽  
Device Physics ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interfacial Engineering ◽  
Organic Light

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...

Blue and green double band luminescent carbon quantum dots: Synthesis, origin of photoluminescence, and application in white light-emitting devices

2021 ◽  
Vol 118 (15) ◽  
pp. 153102
Author(s):  
Xifang Chen ◽  
Wenhui Wu ◽  
Wenxia Zhang ◽  
Ziye Wang ◽  
Zhenjin Fu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Carbon Quantum Dots ◽  
Light Emitting ◽  
Light Emitting Devices

The Emission Property of Phosphors LEDs Based on ZnCuInS/ZnSe/ZnS Quantum Dots

2014 ◽  
Vol 989-994 ◽  
pp. 623-625
Author(s):  
Ke Bi ◽  
Wen Yan Liu ◽  
Tian Yue Xu ◽  
Tie Qiang Zhang ◽  
Yu Zhang
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectrum ◽  
Stokes Shift ◽  
Core Shell ◽  
Photoluminescence Properties ◽  
Red Emission ◽  
Light Emitting ◽  
Quantum Size ◽  
Gan Led ◽  
Photoluminescence Peak

.In this research, ZnCuInS/ZnSe/ZnS quantum dots (QDs) have been studied as an excellent red emitting source for blue GaN LED because of its non-toxic deep red emmission, and large Stokes shift properties. In the paper ZnCuInS/ZnSe/ZnS core/shell quantum dots were prepared with the particle size of 4.5nm. According to the measurement of photoluminescence spectrum emitted by ZnCuInS/ZnSe/ZnS core/shell quantum dots, the emitting peak of 700 nm and the full was achieved as red emitter.It was found that absorption edge and photoluminescence peak shifted to shorter wavelength with decreasing the nanocrystal size due to quantum size effect.Meanwhile, we were prepared ZnCuInS/ZnSe/ZnS core/shell quantum dot light emitting diodes and their photoluminescence properties were studied. After the suitable bias was applied on the films, increasing the ZnCuInS/ZnSe/ZnS QDs concentration in the blue GaN chips, red emission increased with decreasing LED’s blue light.

High-efficiency, deep blue ZnCdS/CdxZn1−xS/ZnS quantum-dot-light-emitting devices with an EQE exceeding 18%

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5650-5657 ◽  
Author(s):  
Ouyang Wang ◽  
Lei Wang ◽  
Zhaohan Li ◽  
Qiulei Xu ◽  
Qingli Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Deep Blue

18% peak external quantum efficiency (EQE) for deep blue QLEDs by using ZnCdS/CdxZn1−xS/ZnS quantum dots.

scholarly journals Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Tingting Zhang ◽  
Xugu Zhang ◽  
Peizhi Yang ◽  
Jinke Bai ◽  
Chun Chang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Quantum Yields ◽  
Excellent Performance ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current Density ◽  
Luminescence Efficiency ◽  
Maximum Current ◽  
Pl Quenching

Stable luminance properties are essential for light-emitting devices with excellent performance. Thermal photoluminescence (PL) quenching of quantum dots (QDs) under a high temperature resulting from a surface hole or electron traps will lead to unstable and dim brightness. After treating CdZnSe/ZnSe QDs with TBP, which is a well-known passivation reagent of the anions, the excess Se sites on the surface of the QDs were removed and their PL quantum yields (QYs) was improved remarkable. Furthermore, after TBP treatment, the CdZnSe/ZnSe QDs exhibit no quenching phenomena even at a high temperature of 310°C. The electroluminescent light-mitting diodes based on the QDs with TBP treatment also demonstrated satisfied performance with a maximum current density of 1679.6 mA/cm2, a peak luminance of 89500 cd/m2, and the maximum values of EQE and luminescence efficiency are 15% and 14.9 cd/A, respectively. The performance of the fabricated devices can be further improved providing much more in-depth studies on the CdZnSe/ZnSe QDs.

scholarly journals Al atomistic surface modulation on colloidal gradient quantum dots for high-brightness and stable light-emitting devices

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jae-Sung Lee ◽  
Byoung-Ho Kang ◽  
Sae-Wan Kim ◽  
Jin-Beom Kwon ◽  
Ok-Sik Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Brightness ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Surface Modulation
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