Role of hydrogen in Sb film deposition and characterization of Sb and GexSby films deposited by cyclic plasma enhanced chemical vapor deposition using metal-organic precursors

2012 ◽  
Vol 520 (23) ◽  
pp. 6947-6953 ◽  
Author(s):  
Hyung Keun Kim ◽  
Jin Hwan Jung ◽  
Doo Jin Choi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Metal Organic ◽  
Organic Precursors

Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition

2008 ◽  
Vol 104 (2) ◽  
pp. 024301 ◽  
Author(s):  
David F. Brown ◽  
Stacia Keller ◽  
Feng Wu ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

High‐Tc Undoped and Pb‐Doped BI‐SR‐CA‐CU‐O thin Films Prepared by Organometallic Chemical Vapor Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
J. M. Zhang ◽  
H. O Marcy ◽  
L .M. Tonge ◽  
B. W. Wessels ◽  
T. J. Marks ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Tc ◽  
Metal Organic ◽  
Organic Precursors ◽  
Organometallic Chemical Vapor Deposition

AbstractFilms of the high‐Tc undoped and Pb‐doped Bi‐Sr‐Ca‐Cu‐O (BSCCO) superconductors have been prepared by low pressure organometallic chemical vapor deposition (OMCVD) using the volatile metal‐organic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, and triphenyl bismuth. Factors which influence texture and morphology of the OMCVD‐derived films have been investigated, including the effects of annealing, doping, and substrates.

Preparation and Characterization of Epitaxial LiNbO3Thin Films by Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 38 (Part 1, No. 9B) ◽  
pp. 5437-5441 ◽  
Author(s):  
Kosuke Shiratsuyu ◽  
Atsushi Sakurai ◽  
Katsuhiko Tanaka ◽  
Yukio Sakabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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