Preparation of single-crystal TiC (111) by radio frequency magnetron sputtering at low temperature

2012 ◽  
Vol 520 (23) ◽  
pp. 6882-6887 ◽  
Author(s):  
Q. Qi ◽  
W.Z. Zhang ◽  
L.Q. Shi ◽  
W.Y. Zhang ◽  
W. Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Single Crystal ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

Microstructural and electrical property studies of Pb(Zr0.52Ti0.48)O3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature

2000 ◽  
Vol 15 (1) ◽  
pp. 199-202
Author(s):  
T. W. Kim ◽  
Y. S. Yoon
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
High Speed ◽  
Interface State ◽  
Radio Frequency Magnetron ◽  
Conduction Band Edge ◽  
Radio Frequency Magnetron Sputtering ◽  
Polycrystalline Layer ◽  
Inp Substrates

Pb(Zr0.52Ti0.48)O3 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron-sputtering at a relatively low temperature (∼450 °C). X-ray diffraction measurements showed that the Pb(Zr0.52Ti0.48)O3 film layers grown on the InP substrates were polycrystalline, and Auger electron spectroscopy measurements indicated that the compositions of the as-grown films consisted of lead, zirconium, titanium, and oxygen. Transmission electron microscopy measurements showed that the grown Pb(Zr0.52Ti0.48)O3 was a polycrystalline layer with small domains and that the Pb(Zr0.52Ti0.48)O3/InP (100) heterointerface had no significant interdiffusion problem. Room-temperature current–voltage and capacitance–voltage (C–V) measurements clearly revealed a metal–insulator–semiconductor behavior for the Pb(Zr0.52Ti0.48)O3 insulator gates, and the interface state densities at the Pb(Zr0.52Ti0.48)O3/p-InP interfaces, as determined from the C–V measurements, were approximately low 1011 eV−1 cm−2 at an energy of about 0.6 eV below the conduction-band edge. The dielectric constant of the Pb(Zr0.52Ti0.48)O3 thin film, as determined from the C–V measurements, was as large as 907.2. These results indicate that the Pb(Zr0.52Ti0.48)O3 layers grown on p-InP (100) substrates at low temperatures hold promise for potential high-density nonvolatile memories and high-speed infrared sensors based on InP substrates.

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