Epitaxial thin films of topological insulator Bi2Te3 with two-dimensional weak anti-localization effect grown by pulsed laser deposition

2012 ◽  
Vol 520 (21) ◽  
pp. 6459-6462 ◽  
Author(s):  
S.X. Zhang ◽  
L. Yan ◽  
J. Qi ◽  
M. Zhuo ◽  
Y.-Q. Wang ◽  
...  
2005 ◽  
Vol 133 (10) ◽  
pp. 641-645 ◽  
Author(s):  
Yimin Cui ◽  
Chunchang Wang ◽  
Bisong Cao

2013 ◽  
Vol 534 ◽  
pp. 659-665 ◽  
Author(s):  
Phuoc Huu Le ◽  
Kaung Hsiung Wu ◽  
Chih Wei Luo ◽  
Jihperng Leu

2004 ◽  
Vol 201 (10) ◽  
pp. 2385-2389 ◽  
Author(s):  
Yanwei Ma ◽  
M. Guilloux-Viry ◽  
O. Pena ◽  
C. Moure

APL Materials ◽  
2015 ◽  
Vol 3 (9) ◽  
pp. 096106 ◽  
Author(s):  
Hiroyuki Oguchi ◽  
Shigehito Isobe ◽  
Hiroki Kuwano ◽  
Susumu Shiraki ◽  
Shin-ichi Orimo ◽  
...  

1992 ◽  
Vol 268 ◽  
Author(s):  
D.B. Fenner ◽  
O. Li ◽  
P.W. Morrison ◽  
J. Cosgrove ◽  
L. Lynds ◽  
...  

ABSTRACTThe successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.


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